Search records | 東京科学大学図書館文献データベース

You can search for articles included in proceedings of international conferences and technical papers which Science Tokyo, Ookayama Library and Suzukakedai Library hold.
Members (from Ookayama, Suzukakedai and Tamachi campus）can obtain tables of contents of 17,000 foreign journals by SwetScan. The libraries do not cover all of them.
List of Searchable Databases

Clear Form

Search for other sites by same keyword(s).

CiNii Books

NDL Search

WebcatPlus

amazon

カーリル

WorldCat

Filter

Title:

Author:

ISBN / ISSN / Paper No:

Source Title:

Publisher:

Publication Year:

～

Clear Form

Type:

Conference Proceedings

Technical Paper

Academic Journal

Select: Check all | Remove all

Sort order

10 | 50 | 100 / Per Page

11 results

Conference Proceedings

1. Increased Growth Rate in a SiC CVD Reactor Using HCI as a Growth Additive

Myers, R. ; Kordina, O. ; Shishkin, Z. ; Rao, S. ; Everly, R. ; Saddow, S. E.

Pub. info.:	Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy. pp.73-76, 2005. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	483-485

Conference Proceedings

2. High Epitaxial Growth Rate of 4H-SiC Using Horizontal Hot-Wall CVD

Myers, R.L. ; Shishkin, Y. ; Kordina, O. ; Haselbarth, I. ; Saddow, S.E.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.187-190, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

3. 5.5-kV Bipolar Diodes From High-Quality CVD 4H-SiC

Irvine, K. G. ; Singh, R. ; Paisley, M. J. ; Palmour, J. W. ; Kordina, O. ; Carter, C. H., Jr.

Pub. info.:	Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A.. pp.119-, 1998. Warrendale, Penn.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	512

Conference Proceedings

4. Characterization of thick 4H-SiC hot-wall CVD layers

Paisley, M. J. ; Irvine, K. G. ; Kordina, O. ; Singh, R. ; Palmour, J. W. ; Carter, C. H. Jr.

Pub. info.:	Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A.. pp.167-, 1999. Warrendale, PA. MRS-Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	572

Conference Proceedings

5. Spatially Resolved Photoluminescence and Thermally Stimulated Luminescence in Semi-Insulating SiC Wafers

Suleimanov, Yu.M. ; Lulu, S. ; Tarasov, I. ; Ostapenko, S. ; Saddow, S.E. ; Torchinska, T.V. ; Heydemann, V.D. ; Roth, M.D. ; Kordina, O. ; MacMillan, M.F.

Pub. info.:	Silicon carbide 2002 -- materials, processing and devices : symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A.. pp.103-108, 2003. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	742

Conference Proceedings

6. 2600 V, 12 A, 4H-SiC, Asymmetrical Gate Turn Off (GTO) Thyristor Development

Agarwal, A. ; Ryu, S. -H. ; Singh, R. ; Kordina, O. ; Palmour, J. W.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.1387-1390, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(2)

Conference Proceedings

7. In Situ Etching of 4H-SiC in H2 with Addition of HCl for Epitaxial CVD Growth

Zhang, J. ; Kordina, O. ; Ellison, A. ; Janzen, E.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.239-242, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

8. Growth Characteristics of SiC in a Hot-Wall CVD Reactor with Rotation

Zhang, J. ; Forsberg, U. ; Isacson, M. ; Ellison, A. ; Henry, A. ; Kordina, O. ; Janzen, E.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.191-194, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

9. In Situ Etching of 4H-SiC in H2 with Addition of HCl for Epitaxial CVD Growth

Zhang, J. ; Kordina, O. ; Ellison, A. ; Janzen, E.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.239-242, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

10.

Conference Proceedings

10. Growth Characteristics of SiC in a Hot-Wall CVD Reactor with Rotation

Zhang, J. ; Forsberg, U. ; Isacson, M. ; Ellison, A. ; Henry, A. ; Kordina, O. ; Janzen, E.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.191-194, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

11 results

Select: Check all | Remove all

Sort order

10 | 50 | 100 / Per Page

Filtering by:

Author: Kordina, O.