1.

Conference Proceedings
Conference Proceedings
1. Simulation Study of 4H-SiC Junction-Gated MOSFETs from 300 K to 773 K
Lee, H.S. ; Koo, S.M. ; Zetterling, C.M. ; Danielsson, E. ; Domeij, M. ; Oestling, M.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1437-1440,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
2.

Conference Proceedings
Conference Proceedings
2. SiC JMOSFETs for High-Temperature Stable Circuit Operation
Koo, S.M. ; Zetterling, C.M. ; Lee, H.S. ; Oestling, M.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1445-1450,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460