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14 results

Conference Proceedings

1. INVESTIGATION OF MISFIT DISLOCATION CONFIGURATIONS IN MBE-GROWN InGaAs LAYERS ON MISALIGNED GaAs(001) SUBSTRATES

Werner, P. ; Zakharov, N.D. ; Chen, Y. ; Liliental-Weber, Z. ; Washburn, J. ; Klem, J.F. ; Tsao, J.Y.

Pub. info.:	Microcrystalline semiconductors : materials science & devices : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A.. pp.811-814, 1993. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	283

Conference Proceedings

2. Vertical Cavity Surface Emitting Lasers Emitting Near 1.5 μm with Sb-Based Reflectors

Blum, O. ; Klem, J.F. ; Lear, K.L. ; Vawter, G.A. ; Kurtz, S.R.

Pub. info.:	Proceedings of the Symposium on Light Emitting Devices for Optoelectronic Applications and the Twenty-Eighth State-of-the-Art Program on Compound Semiconductors. pp.203-209, 1998. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	98-2

Conference Proceedings

3. Comparison of InP/InGaAs HBT and InAlAs/InGaAs HBT for ULP Applications

Chang, P.C. ; Baca, A.G. ; Klem, J.F. ; Hafich, M.J. ; Ashby, C.I.H. ; Hietala, V.M.

Pub. info.:	State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXXI) : proceedings of the thirty-first symposium. pp.177-184, 1999. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	99-17

Conference Proceedings

4. DC and Microwave Characteristics of 100 V GaAs/AlGaAs HBTs

Baca, A.G. ; Chang, P.C. ; Klem, J.F. ; Ashby, C.I.H. ; Martin, D.C.

Pub. info.:	Compound semiconductor power transistors II : proceedings of the second international symposium and state-of-the-art program on compound semiconductors (SOTAPOCS XXXII) : proceedings of the thirty-second international symposium. pp.128-138, 2000. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2000-1

Conference Proceedings

5. Minority-Carrier Lifetimes, Defects, and Solar Cells of InGaAsN, Lattice-Matched to GaAs

Kurtz, S.R. ; Allerman, A.A. ; Jones, E.D. ; Klem, J.F. ; Seager, C.H.

Pub. info.:	Photovoltaics for the 21st century : proceedings of the international symposium. pp.163-169, 1999. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	99-11

Conference Proceedings

6. Next-Generation Thin Films for Photovoltaics: InGaAsN

Jones, E.D. ; Allerman, A.A. ; Friedman, D.J. ; Geisz, J.F. ; Klem, J.F. ; Kurtz, S.R. ; Modine, N.R. ; Shan, W. ; Tu, C. ; Walukiewicz, W.

Pub. info.:	Photovoltaics for the 21st century : proceedings of the international symposium. pp.252-267, 1999. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	99-11

Conference Proceedings

7. In-Situ Reflectance and Virtual Interface Analysis for Compound Semiconductor Process Control

Breiland, W.G. ; Hong, H.Q. ; Hammons, B.E. ; Klem, J.F.

Pub. info.:	Proceedings of the Symposium on Light Emitting Devices for Optoelectronic Applications and the Twenty-Eighth State-of-the-Art Program on Compound Semiconductors. pp.311-319, 1998. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	98-2

Conference Proceedings

8. Comparison Of Deep Level Spectra of MBE- and MOCVD-Grown InGaAsN

Kaplar, R.J. ; Ringel, S.A. ; Kurtz, Steven R. ; Allerman, A.A. ; Klem, J.F.

Pub. info.:	Defect and impurity engineered semiconductors and devices III : symposium held April 1-5, 2002, San Francisco, California, U.S.A.. pp.403-408, 2002. Warrendale, Pa. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	719

Conference Proceedings

9. SELECTIVE SUPPRESSION OF CARRIER-DRIVEN PHOTOCHEMICAL ETCHING: RAMAN SPECTROSCOPY AS A DIAGNOSTIC TOOL

Ashby, C.I.H. ; Myers, D.R. ; Vawter, G.A. ; Biefeld, R.M. ; Klem, J.F.

Pub. info.:	Surface chemistry and beam-solid interactions : symposium held November 26-29, 1990, Boston, Massachusetts, U.S.A.. pp.581-586, 1991. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	201

10.

Conference Proceedings

10. The Role of Nitrogen-Induced Localization and Defects in InGaAsN (= 2 N):Comparison of InGaAsN Grown by Molecular Beam Epitaxy and Metal-Organic Chemical Vapor Deposition

Kurtz, Steven R. ; Allerman, A.A. ; Klem, J.F. ; Sieg, R.M. ; Seager, C.H. ; Jones, E.D.

Pub. info.:	Progress in semiconductor materials for optoelectronic applications : symposium held November 26-29, 2001, Boston, Massachusetts, U.S.A. pp.21-28, 2002. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	692

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Author: Klem, J.F.