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88 results

Conference Proceedings

1. Epitaxial Growth and Characterization of 4H-SiC(11-20) and (03-38)

Kimoto, T. ; Hashimoto, K. ; Fujihira, K. ; Danno, K. ; Nakamura, S. ; Negoro, Y. ; Matsunami, H.

Pub. info.:	Silicon carbide 2002 -- materials, processing and devices : symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A.. pp.3-14, 2003. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	742

Conference Proceedings

2. Four Current Examples of Characterization of Silicon Carbide

Bai, S. ; Ke, Yue ; Shishkin, Y. ; Shigiltchoff, O. ; Devaty, R.P. ; Choyke, W.J. ; Strauch, D. ; Stojetz, B. ; Dorner, B. ; Hobgood, D. ; Serrano, J. ; Cardona, M. ; Nagasawa, H. ; Kimoto, T. ; Porter, L.M.

Pub. info.:	Silicon carbide 2002 -- materials, processing and devices : symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A.. pp.151-162, 2003. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	742

Conference Proceedings

3. MOSFET Performance of 4H-, 6H-, and 15R-SiC Processed by Dry and Wet Oxidation

Yano, H. ; Kimoto, T. ; Matsunami, H. ; Bassler, M. ; Pensl, G.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.1109-1112, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(2)

Conference Proceedings

4. Nuclear Transmutation Doping of Phosphorus into 6H-SiC

Tamura, S. ; Kimoto, T. ; Matsunami, H. ; Okada, M. ; Kanazawa, S. ; Kimura, I.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.849-852, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(2)

Conference Proceedings

5. Anisotropy of Inversion Channel Mobility in 4H- and 6H-SiC MOSFETS on (1120) Face

Yano, H. ; Hirao, T. ; Kimoto, T. ; Matsunami, H. ; Asano, K. ; Sugawara, Y.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.1105-1108, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(2)

Conference Proceedings

6. Formation of Deep pn Junctions by MeV Al- and B-Ion Implantations into 4H-SiC and Reverse Characteristics

Miyamoto, N. ; Saitoh, A. ; Kimoto, T. ; Matsunami, H. ; Hishida, Y. ; Watanabe, M.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.1347-1350, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(2)

Conference Proceedings

7. Aluminum-Ion Implantation into 4H-SiC (11-20) and (0001)

Negoro, Y. ; Kimoto, T. ; Matsunami, H.

Pub. info.:	Silicon carbide 2004--materials, processing and devices : symposium held April 14-15, 2004, San Francisco, California, U.S.A.. pp.217-222, 2004. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	815

Conference Proceedings

8. MOS Interface Properties and MOSFET Performance on 4H-SiC{0001} and Non-Basal Faces Processed by N2O Oxidation

Kimoto, T. ; Kanzaki, Y. ; Noborio, M. ; Kawano, H. ; Matsunami, H.

Pub. info.:	Silicon carbide 2004--materials, processing and devices : symposium held April 14-15, 2004, San Francisco, California, U.S.A.. pp.199-204, 2004. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	815

Conference Proceedings

9. SiC MISFETs With MBE-grown AIN Gate Dielectric

Zetterling, C. -M. ; Ostling, M. ; Yano, H. ; Kimoto, T. ; Matsunami, H. ; Linthicum, K. ; Davis, R. F.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.1315-1318, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(2)

10.

Conference Proceedings

10. High output power widely tunable laser module (Invited Paper)

Mukaihara, T. ; Kurobe, T. ; Kimoto, T. ; Shinagawa, T. ; Nishita, M. ; Kasukawa, A.

Pub. info.:	Active and passive optical components for WDM communications IV : 25-28 October, 2004, Philadelphia, Pennsylvania, USA. pp.206-212, 2004. Bellingham, Wash.. SPIE - The International Society of Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	5595

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