1.

Conference Proceedings
Conference Proceedings
1. The Mechanism of Void Formation in the Growth of 3C-SiC Thin Film in Si Substrate
Se,Y.H. ; Kim,K.C. ; Shim,H.W. ; Nahm,K.S. ; Suh,E.-K. ; Lee,H.J. ; Hwang,Y.C. ; Kim,D.-K. ; Lee,B.-T.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.199-202,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
2.

Conference Proceedings
Conference Proceedings
2. Effects of Void Formation on Electrical and Optical Properties of 3C-SiC on Si(111)Substrates
Shim,H.W. ; Kim,K.C. ; Seo,Y.H. ; Nahm,K.S. ; Suh,E.-K. ; Lee,H.J. ; Hwang,Y.G.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.195-198,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268