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15 results

Conference Proceedings

1. Real Time Intrusive Optical Emission Spectroscopy for Process Control

Lee, P-W. ; Kim, Y-J. ; Seo, S.H. ; Kim, J-H. ; Chang, H-Y.

Pub. info.:	Proceedings of the Symposium on Process control, Diagnostics, and Modeling in Semiconductor Manufacturing. pp.208-217, 1995. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	95-2

Conference Proceedings

2. Atomic Layer Deposition of Ruthenium Glue Layer for Copper Damascene Interconnect

Kwon, O-KO ; Kim, J-H. ; Kang, S-W.

Pub. info.:	Thin film materials, processes, and reliability, plasma processing for the 100 nm node and copper interconnects with low-k inter-level dielectric films : proceedings of the international symposium. pp.181-205, 2003. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2003-13

Conference Proceedings

3. Thin Nitride Barrier Self-Aligned Contact (TNBSAC) Oxide Etching in a High Density Inductively Coupled Plasma Using C4F8/CH3F/Ar Chemistry

Kim, J-H. ; Ryu, J-O. ; Kim, J-S. ; Lee, B-C. ; Kim, J-W. ; Seol, Y-S.

Pub. info.:	Proceedings of the twelfth International Symposium on Plasma Processing. pp.137-145, 1998. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	98-4

Conference Proceedings

4. A study on Low Dielectric Material Deposition Using a Helicon Plasma Source

Choi, C-K. ; Oh, Y.J. ; Lee, K-M ; Kim, J-H. ; Chang, H-Y. ; Kang, S-W.

Pub. info.:	Proceedings of the eleventh International Symposium on Plasma Processing. pp.651-661, 1996. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	96-12

Conference Proceedings

5. Kinetic Modeling for Multi-Component Thin Film Growth in Plasma-Enhanced Atomic Layer Deposition

Kim, J-H. ; Kim, J-Y. ; Park, P-K. ; Kang, S-W.

Pub. info.:	Thin film materials, processes, and reliability, plasma processing for the 100 nm node and copper interconnects with low-k inter-level dielectric films : proceedings of the international symposium. pp.1-7, 2003. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2003-13

Conference Proceedings

6. Comparison of TiN Films Produced by TDEAT (Ti[N(C2H5)2]4), TDMAT (Ti[N(CH3)2]4), and a New Precursor TEMAT (Ti[N(CH3)C2H5]4)

Lee, J-G. ; Kim, J-H. ; Shin, H-K. ; Park, S-J. ; Yun, S-J. ; Kim, G-H.

Pub. info.:	Advanced metallization for future ULSI : symposium held April 8-11, 1996, San Francisco, California, U.S.A.. pp.371-, 1996. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	427

Conference Proceedings

7. Si Delta Doped GaN Grown by Low-Pressure Metalorganic Chemical Vapor Deposition

Kim, J-H. ; Yang, G. M. ; Choi, S. C. ; Choi, J. Y. ; Cho, H. K. ; Lim, K. Y. ; Lee, H. J.

Pub. info.:	GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A.. pp.G3.49.1-, 1999. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	537

Conference Proceedings

8. Etch Induced Gate Oxide Degradation in an Electron Cyclotron Resonance Plasma Etcher

Lee, S.H. ; Lee, D-D. ; Kim, J-H. ; Shin, K-S. ; Park, H-S. ; Choi, H-S.

Pub. info.:	Proceedings of the Third International Symposium on Corrosion and Reliability of Electronic Materials and Devices. pp.293-302, 1994. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	1994-29

Conference Proceedings

9. POLY(ENAMINONITRILES): NOVEL MATERIALS FOR USE IN MICROELECTRONICS

Moore, J. A. ; Kim, J-H.

Pub. info.:	Materials science of high temperature polymers for microelectronics : symposium held April 29-May 2, 1991, Anaheim, California, U.S.A.. pp.61-68, 1991. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	227

10.

Conference Proceedings

10. Improved Device Performance of In0.5Ga0.5P/In0.22Ga0.78As/GaAs MOS p-HEMT Using a Selective Liquid Phase Oxidation

Kang, I-H. ; Lee, J-W. ; Kang, S-J. ; Jo, S-J. ; In, S-K. ; Song, H-J. ; Kim, J-H. ; Song, J-I.

Pub. info.:	Progress in semiconductors II : electronic and optoelectronic applications : symposium held December 2-5, 2002, Boston, Massachusetts, U.S.A.. pp.427-432, 2003. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	744

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Author: Kim, J-H.