1.

Conference Proceedings
Conference Proceedings
1. Influence of the Crystal Thickness on the SiC PVT Growth Rate
Cherednichenko, D.I. ; Khlebnikov, Y.I. ; Drachev, R.V. ; Khlebnikov, I.I. ; Sudarshan, T.S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.95-98,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
2.

Conference Proceedings
Conference Proceedings
2. Graphitization of the Seeding Surface during the Heating Stage of SiC PVT Bulk Growth
Drachev, R.V. ; Cherednichenko, D.I. ; Khlebnikov, I.I. ; Khlebnikov, Y.I. ; Sudarshan, T.S.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.99-102,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
3.

Conference Proceedings
Conference Proceedings
3. Influence of the Crystal Thickness on the SiC PVT Growth Rate
Cherednichenko, D.I. ; Khlebnikov, Y.I. ; Drachev, R.V. ; Khlebnikov, I.I. ; Sudarshan, T.S.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.95-98,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393