1.

Conference Proceedings
Conference Proceedings
1. Analysis of Strain in GaN on Al2O3 and 6H-SiC: Near-Bandedge Phenomena
Edwards, N. V. ; Bremser, M. D. ; Weeks, T. W., Jr. ; Kern, R. S. ; Liu, H. ; Stall, R. A. ; Wickenden, A. E. ; Doverspike, K. ; Gaskill, D. K. ; Freitas, J. A., Jr. ; Rossow, U. ; Davis, R. F. ; Aspnes, D. E.
Pub. info.: Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.405-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 395
2.

Conference Proceedings
Conference Proceedings
2. Microstructure of InGaN Quantum Wells
Ponce, F. A. ; Cherns, D. ; Goetz, W. ; Kern, R. S.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.453-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
3.

Conference Proceedings
Conference Proceedings
3. Role of Dopants and Impurities on Pinhole Formation; Defects Formed at InGaN/GaN and AlGaN/GaN Quantum Wells
Liliental-Weber, Z. ; Ruvimov, S. ; Swider, W. ; Kim, Y. ; Washburn, J. ; Nakamura, S. ; Kern, R. S. ; Chen, Y. ; Yang, J. W.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.375-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
4.

Conference Proceedings
Conference Proceedings
4. Cathodoluminescence Studies of InGaN Quantum Wells
Ponce, F. A. ; Galloway, S. A. ; Goetz, W. ; Kern, R. S.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.625-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
5.

Conference Proceedings
Conference Proceedings
5. Issues and Examples Regarding Growth of AlN, GaN and AlxGa1-xN Thin Films Via OMVPE and Gas Source MBE
Davis, Robert F. ; Weeks, T. W., Jr. ; Bremser, M. D. ; Tanaka, S. ; Kern, R. S. ; Sitar, Z. ; Ailey, K. S. ; Perry, W. G. ; Wang, C.
Pub. info.: Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.3-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 395
6.

Conference Proceedings
Conference Proceedings
6. In-Plane Optical Anisotropies of AlxGa1-xN Films in Their Regions of Transparency
Rossow, U. ; Edwards, N. V. ; Bremser, M. D. ; Kern, R. S. ; Liu, H. ; Davis, R. F. ; Aspnes, D. E.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.835-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449