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13 results

Conference Proceedings

1. Textural and framework-confined porosity in S+I- mesoporous silica

Agren, P. ; Linden, M. ; Trens, P. ; Karlsson, S.

Pub. info.:	Characterisation of porous solids V : proceedings of the 5th International Symposium on the Characterisation of Porous Solids (COPS-V), Heidelberg, Germany, May 30-June 2, 1999. pp.297-, 2000. New York. Elsevier
Title of ser.:	Studies in surface science and catalysis
Ser. no.:	128

Conference Proceedings

2. Characterization of p-type buffer layers for SiC microwave device applications

Konstantinov, A. O. ; Karlsson, S. ; Nilsson, P-A. ; Saroukhan, A-M. ; Svedberg, J-O. ; Nordell, N. ; Harris, C. I. ; Eriksson, J. ; Rorsman, N.

Pub. info.:	Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A.. pp.197-, 1999. Warrendale, PA. MRS-Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	572

Conference Proceedings

3. Dissociation Energy of the Passivating Hydrogen-Aluminum Complex in 4H-SiC

Janson, M.S ; Hallen, A. ; Linnarsson, M.K. ; Nordell, N. ; Karlsson, S. ; Svensson, B.G.

Pub. info.:	Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000. pp.427-430, 2001. Uetikon-Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	353-356

Conference Proceedings

4. Metal-Contact Enhanced Incorporation of Deuterium in 4H- and 6H-SiC

Linnarsson, M. K. ; Spetz, A. Ll. ; Janson, M. S. ; Ekedahl, L. G. ; Karlsson, S. ; Schoner, A. ; Lundstrom, I. ; Svensson, B. G.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.937-940, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(2)

Conference Proceedings

5. Short-Channel Effect Suppression in Silicon Carbide Power MESFETs

Konstantinov, A. ; Saroukhan, A.-M. ; Karlsson, S. ; Harris, C. ; Litwin, A.

Pub. info.:	Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A.. 2001. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	640

Conference Proceedings

6. Investigation of Lo-Hi-Lo and Delta-Doped Silicon Carbide Structures

Konstantinov, A. ; Karlsson, S. ; AdÅs, C. ; Harris, C. ; Linnarsson, M.

Pub. info.:	Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A.. 2001. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	640

Conference Proceedings

7. 4H-SiC CVD Epitaxial Layers with Improved Structural Quality Grown on SiC Wafers with Reduced Micropipe Density

Kalinina, E. V. ; Zubrilov, A. ; Solov'ev, V. ; Kuznetsov, N. ; Hallen, A. ; Konstantinov, A. ; Karlsson, S. ; Rendakova, S. ; Dmitriev, V.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.505-508, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(1)

Conference Proceedings

8. Epitaxial Growth of β-SiC on Ion-Beam Synthesized β-SiC: Structural Characterization

Romano-Rodriguez, A. ; Perez-Rodriguez, A. ; Serre, C. ; Morante, J. R. ; Esteve, J. ; Acero, M. C. ; Kogler, R. ; Skorupa, W. ; Ostling, M. ; Nordell, N. ; Karlsson, S. ; Landuyt, J. Van

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.309-312, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(1)

Conference Proceedings

9. Precipitate Formation in Heavily Al-Doped 4H-SiC Layers

Linnarsson, M.K. ; Persson, P.O.A. ; Bleichner, H. ; Janson, M. ; Zimmermann, U. ; Andersson, H. ; Karlsson, S. ; Yakimova, R. ; Hultman, L. ; Svensson, B.G.

Pub. info.:	Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000. pp.583-586, 2001. Uetikon-Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	353-356

10.

Conference Proceedings

10. Growth of δ-Doped SiC Epitaxial Layers

Karlsson, S. ; Adas, C. ; Konstantinov, A. ; Linnarsson, M.K.

Pub. info.:	Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000. pp.563-566, 2001. Uetikon-Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	353-356

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Author: Karlsson, S.