1.

Conference Proceedings
Conference Proceedings
1. DEEP DONOR AND ACCEPTOR LEVELS INDUCED BY HIGH TEMPERATURE AND LONG TIME ANNEALING IN LEC GALLIUM ARSENIDE
Marrakchi, G. ; Kalboussi, A. ; Guillot, G. ; Ben Salem, M. ; Maaref, H. ; Molva, E.
Pub. info.: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.859-864,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 240
2.

Conference Proceedings
Conference Proceedings
2. Electrical and optical properties of Yb, Er doped GaAs
Benyattou, T. ; Seghier, D. ; Bremond, G. ; Moneger, S. ; Kalboussi, A. ; Marrakchi, G. ; Guillot, G. ; Lhomer, C. ; Lambert, B. ; Toudic, Y. ; Corre A. Le
Pub. info.: Rare earth doped semiconductors : symposium held April 13-15, 1993, San Francisco, California, U.S.A..  pp.163-,  1993.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 301