1.

Conference Proceedings
Conference Proceedings
1. The Effects of Growth Conditions in Dislocation Density in SiC Epi-Layers Produced by the Sublimation Epitaxy Technique
Kakanakova-Georgieva,A. ; MacMillan,M.F. ; Nishino,S. ; Yakimova,R. ; Janzen,E.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.147-150,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
2.

Conference Proceedings
Conference Proceedings
2. Domain Occurrence in SiC Epitaxial Layers Grown by Sublimation
Tuominen,M. ; Yakimova,R. ; Kakanakova-Georgieva,A. ; MacMillan,M.F. ; Syvajarvi,M. ; Janzen,E.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.151-154,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
3.

Conference Proceedings
Conference Proceedings
3. Physical and Electrical Characterization of WN Schottky Contacts on 4H-SiC
Noblanc,O. ; Arnodo,C. ; Cassette,S. ; Brylinski,C. ; Kakanakova-Georgieva,A. ; Marinova,Ts. ; Kassamakova,L. ; Kakanakov,R. ; Pecz,B. ; Sulyok,A. ; Radnoczi,G.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.817-820,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
4.

Conference Proceedings
Conference Proceedings
4. High Growth Rate of α-SiC by Sublimation Epitaxy
Syvajarvi,M. ; Yakimova,R. ; MacMillan,M.F. ; Tuominen,M. ; Kakanakova-Georgieva,A. ; Hemmingsson,C.G. ; Ivanov,I.G. ; Janzen,E.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.143-146,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268