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15 results

Conference Proceedings

1. Triple Stack Bonding for High Voltage Si Devices

K.D. Hobart ; F.J. Kub ; B.F. Phlips ; J.D. Kurfess ; J. Neilson

Pub. info.:	Semiconductor wafer bonding 9 : science, technology, and applications. pp.59-66, 2006. Pennington, N.J.. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	3(6)

Conference Proceedings

2. Ultraviolet Photoluminescence Imaging of Stacking Fault Contraction in 4H-SiC Epitaxial Layers

N.A. Mahadik ; R.E. Stahlbush ; J.D. Caldwell ; K.D. Hobart

Pub. info.:	Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA. pp.391-394, 2012. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	717-720

Conference Proceedings

3. Grayscale Junction Termination for High-Voltage SiC Devices

E.A. Imhoff ; F.J. Kub ; K.D. Hobart

Pub. info.:	Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain. pp.691-694, 2009. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	615-617

Conference Proceedings

4. High-Current 10 kV SiC JBS Rectifier Performance

E.A. Imhoff ; K.D. Hobart

Pub. info.:	Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007. pp.943-946, 2009. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	600-603

Conference Proceedings

5. Electrical Characterization of the Graphene-SiC Heterojunction

T.J. Anderson ; K.D. Hobart ; L.O. Nyakiti ; V.D. Wheeler ; R.L. Myers-Ward

Pub. info.:	Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA. pp.641-644, 2012. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	717-720

Conference Proceedings

6. Temperature and Time Dependent Threshold Voltage Instability in 4H-SiC Power DMOSFET Devices

M.J. Tadjer ; K.D. Hobart ; E.A. Imhoff ; F.J. Kub

Pub. info.:	Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007. pp.1147-1150, 2009. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	600-603

Conference Proceedings

7. Temperature Dependence of Shockley Stacking Fault Expansion and Contraction in 4H-SiC p-i-n Diodes

J.D. Caldwell ; R.E. Stahlbush ; O.J. Glembocki ; K.D. Hobart ; K.X. Liu

Pub. info.:	Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007. pp.273-278, 2009. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	600-603

Conference Proceedings

8. Positive Temperature Coefficient SiC PiN Diodes

E.A. Imhoff ; K.D. Hobart ; F.J. Kub ; M.G. Ancona ; R.L. Myers-Ward

Pub. info.:	Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA. pp.981-984, 2012. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	717-720

Conference Proceedings

9. Performance of Hybrid 4.5 kV SiC JBS Freewheeling Diode and Si IGBT

K.D. Hobart ; E.A. Imhoff ; F.J. Kub ; A.R. Hefner ; T.H. Duong

Pub. info.:	Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA. pp.941-944, 2012. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	717-720

10.

Conference Proceedings

10. Thermally Stimulated Current Separation of Hole and Acceptor Trap Density in 4H-SiC MOS Devices Using Gamma Ray Irradiation

M.J. Tadjer ; K.D. Hobart ; R.E. Stahlbush ; P.J. McMarr ; H.L. Hughes

Pub. info.:	Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009. pp.469-472, 2010. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	645-648

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Author: K.D. Hobart