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11 results

Conference Proceedings

1. Microscopic Understanding of PBTI and NBTI Mechanisms in High-κ / Metal Gate Stacks

M. Sato ; K. Yamabe ; K. Shiraishi ; S. Miyazaki ; K. Yamada

Pub. info.:	Physics and technology of high-k gate dielectrics 5. pp.615-627, 2007. Pennington, NJ. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	11(4)

Conference Proceedings

2. Failure Analysis of a SiC MOS Capacitor with a Poly-Si Gate Electrode

S. Sato ; K. Yamabe ; T. Endoh ; M. Niwa

Pub. info.:	Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy. pp.485-488, 2016. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	858

Conference Proceedings

3. Effect of Annealing on Electronic Characteristics of HfSiON Films fabricated by Damascene Gate Process

K. Yamabe ; K. Murata ; T. Hayashi ; T.C. Tamura ; M. Sato

Pub. info.:	Physics and technology of high-k gate dielectrics 6. pp.521-526, 2008. Pennington, NJ. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	16(5)

Conference Proceedings

4. Two-Dimensional Roughness Growth at Surface and Interface of SiO₂ Films during Thermal Oxidation of 4H-SiC(0001)

R. Hasunuma ; T. Fukasawa ; R. Kosugi ; Y. Ishida ; K. Yamabe

Pub. info.:	Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA. pp.785-788, 2012. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	717-720

Conference Proceedings

5. Asymmetric Distribution of Charge Trap in HfO₂-Based High-k Gate Dielectrics

K. Higuchi ; T. Naito ; A. Uedono ; K. Shiraishi ; K. Torii ; M. Boero ; T. Chikyow ; S. Yamosaki ; K. Yamada ; R. Hasumuma ; K. Yamabe

Pub. info.:	Physics and technology of high-k gate dielectrics III. pp.777-788, 2006. Pennington, N.J.. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	1(5)

Conference Proceedings

6. Morphological Change in Surface and Interface during Ultrathin SiO₂ Film Growth

R. Hasunuma ; J. Okamoto ; N. Tokuda ; K. Yamabe

Pub. info.:	Physics and Chemistry of SiO2 and the Si-SiO2 Interface-5. pp.255-266, 2005. Pennington, N.J.. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	1(1)

Conference Proceedings

7. NF₃ Added Oxidation of 4H-SiC(0001) and Suppression of Interface Degradation

R. Hasunuma ; M. Nagoshi ; K. Yamabe

Pub. info.:	Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan. pp.619-622, 2014. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	778-780

Conference Proceedings

8. Vacancy-Type Defects in MOSFETs with High-κ Gate Dielectrics Probed by Monoenergetic Positron Beams

A. Uedono ; R. Hasunuma ; K. Shiraishi ; K. Yamabe ; S. Inumiya

Pub. info.:	Physics and technology of high-k gate dielectrics 5. pp.81-90, 2007. Pennington, NJ. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	11(4)

Conference Proceedings

9. Wide Controllability of Flatband Voltage in La₂O₃ Gate Stack Structures-Remarkable Advantages of La₂O₃ over HfO₂

K. Ohmori ; P. Ahmet ; K. Shiraishi ; K. Yamabe ; H. Watanabe ; Y. Akasaka ; N. Umezawa ; K. Nakajima ; M. Yoshitake ; T. Nakayama ; K. Chang ; K. Kakushima ; Y. Nara ; M. L. Green ; H. Iwai ; K. Yamada ; T. Cchikyow

Pub. info.:	Physics and technology of high-k gate dielectrics 4. pp.351-362, 2006. Pennington, N.J.. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	3(3)

10.

Conference Proceedings

10. Extensive Studies for Effects of Nitrogen Incorporation into Hf-Based High-k Gate Dielectrics

N. Umezawa ; K. Shiraishi ; H. Watanabe ; K. Toni ; Y. Akasaka ; S. Inumiya ; M. Boero ; A. Uedono ; S. Miyazaki ; T. Ohno ; T. Chikyow ; K. Yamabe ; Y. Nara ; K. Yamada

Pub. info.:	Dielectrics for nanosystems II: materials science, processing, reliability, and manufacturing. pp.63-78, 2006. Pennington, N.J.. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	2(1)

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Author: K. Yamabe