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16 results

Conference Proceedings

1. High Throughput SiC Wafer Polishing with Good Surface Morphology

T. Kato ; K. Wada ; E. Hozomi ; H. Taniguchi ; T. Miura ; S.I. Nishizawa ; K. Arai

Pub. info.:	Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006. pp.753-756, 2007. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	556-557

Conference Proceedings

2. Defect and Growth Analysis of SiC Bulk Single Crystals with High Nitrogen Doping

T. Kato ; T. Miura ; K. Wada ; E. Hozomi ; H. Taniguchi ; S.I. Nishizawa ; K. Arai

Pub. info.:	Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006. pp.239-242, 2007. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	556-557

Conference Proceedings

3. Static and Dynamic Characteristics of SiC MOSFETs and SBDs for 3.3 kV 400 A Full SiC Modules

K. Wada ; H. Tamaso ; S. Itoh ; K. Kanbara ; T. Hiyoshi

Pub. info.:	Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France. pp.592-595, 2015. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	821-823

Conference Proceedings

4. Gate Oxide Reliability of 4H-SiC V-Groove Trench MOSFET with Thick Bottom Oxide

T. Hiyoshi ; T. Masuda ; Y. Saitoh ; K. Wada ; T. Tsuno

Pub. info.:	Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France. pp.741-744, 2015. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	821-823

Conference Proceedings

5. Interlaboratory Comparison of Positron Annihilation Lifetime Measurements

K. Ito ; T. Oka ; Y. Kobayashi ; Y. Shirai ; K. Wada

Pub. info.:	Positron and positronium chemistry : proceedings of the 9th International Workshop on Positron and Positronium Chemistry, May 11-15, 2008, Wuhan University, China. pp.248-250, 2009. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	607

Conference Proceedings

6. Current-Induced Shallow Impurity Diffusion In GaAs

M. Vematsu ; K. Wada

Pub. info.:	Proceedings of the Eighteenth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XVIII). pp.276-285, 1993. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	1993-27

Conference Proceedings

7. Morphology Improvement of Step Bunching on 4H-SiC Wafers by Polishing Technique

T. Kato ; A. Kinoshita ; K. Wada ; T. Nishi ; E. Hozomi

Pub. info.:	Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009. pp.763-766, 2010. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	645-648

Conference Proceedings

8. A Novel Truncated V-Groove 4H-SiC MOSFET with High Avalanche Breakdown Voltage and Low Specific on-Resistance

T. Masuda ; K. Wada ; T. Hiyoshi ; Y. Saitoh ; H. Tamaso

Pub. info.:	Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan. pp.907-910, 2014. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	778-780

Conference Proceedings

9. Improvement of Interface State and Channel Mobility Using 4H-SiC (0-33-8) Face

T. Hiyoshi ; T. Masuda ; K. Wada ; S. Harada ; Y. Namikawa

Pub. info.:	Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation. pp.506-509, 2013. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	740-742

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Conference Proceedings

10. Blocking Characteristics of 2.2 kV and 3.3 kV-Class 4H-SiC MOSFETs with Improved Doping Control for Edge Termination

K. Wada ; K. Uchida ; R. Kimura ; M. Sakai ; S. Hatsukawa

Pub. info.:	Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan. pp.915-918, 2014. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	778-780

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Author: K. Wada