1.

Conference Proceedings
Conference Proceedings
1. Interlayer-Assisted Stability of Germanosilicide for Heavily-Doped n+-Si0.83Ge0.17 Grown by Reduced Pressure Chemical Vapor Deposition
K. Shim ; A. Choi ; S. Choi ; H. Yang ; S. Kim
Pub. info.: SiGe and Ge, materials, processing, and devices.  pp.133-143,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(7)
2.

Conference Proceedings
Conference Proceedings
2. Precise Analysis of Si/Graded-Si1-xGex/Si1-x/Gex Heterostructure Films Grown by Reduced Pressure Chemical Vapor Deposition Using Spectroscopic Ellipsometry
K. Shim ; J.J. Seo ; S. Choi ; H. Yang ; J. Kim
Pub. info.: SiGe and Ge, materials, processing, and devices.  pp.231-242,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(7)
3.

Conference Proceedings
Conference Proceedings
3. Inductively Coupled Ar/CCl2F4/Cl2 Plasma Etching of Ge
T. Kim ; S. Choi ; T. Jeong ; S. Kang ; K. Shim
Pub. info.: SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices.  pp.127-133,  2008.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 16(10)
4.

Conference Proceedings
Conference Proceedings
4. Photocurrent of SiGe/Si Strained Multiple Quantum-Wells Grown by UHV-CVD
T. Kim ; S. Choi ; T. Jeong ; S. Kang ; K. Shim
Pub. info.: SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices.  pp.875-880,  2008.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 16(10)
5.

Conference Proceedings
Conference Proceedings
5. New ArF resist introduction for process through-put enhancement
M. S. Kim ; H. Ryu ; H. Lee ; H. Kim ; K. Shim ; M. Gil ; H. Kang
Pub. info.: Advances in resist materials and processing technology XXIV.  2007.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 6519