Blank Cover Image

Demonstration of SiC-MOSFET Embedding Schottky Barrier Diode for Inactivation of Parasitic Body Diode

Author(s):
S. Hino
H. Hatta
K. Sadamatsu
Y. Nagahisa
S. Yamamoto
T. Iwamatsu
Y. Yamamoto
M. Imaizumi
S. Nakata
S. Yamakawa
5 more
Publication title:
Silicon Carbide and Related Materials 2016
Title of ser.:
Materials science forum
Ser. no.:
897
Pub. Year:
2017
Page(from):
477
Page(to):
482
Pages:
6
Pub. info.:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9783035710434 [3035710430]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Development of 3.3 kV SiC-MOSFET: Suppression of Forward Voltage Degradation of the Body Diode

S. Yamamoto, Y. Nakao, N. Tomita, S. Nakata, S. Yamakawa

Trans Tech Publications
7 Conference Proceedings Accuracy of the Energy Distribution of the Interface States at the SiO2/SiC Interface by Conductance Method

M. Noguchi, T. Iwamatsu, H. Amishiro, H. Watanabe, S. Nakata

Trans Tech Publications
2 Conference Proceedings Investigation on Internally Unbalanced Switching Behavior for Realization of 1-cm2 SiC-MOSFET

S. Hino, M. Ito, N. Miura, M. Imaizumi, S. Yamakawa

Trans Tech Publications
8 Conference Proceedings Switching Characteristics of SiC-MOSFET and SBD Power Modules

Imaizumi, M., Tarui, Y., Kinouchi, S., Nakatake, H., Nakao, Y., Watanabe, T., Fujihira, K., Miura, N., Takami, T., …

Trans Tech Publications
3 Conference Proceedings Minimization of Electric Field Enhancement at Electrode Edge by Surface High Resistive Layer in Ti/4H-SiC Schottky Barrier Diode

Ohtsuka, K., Sugimoto, H., Kinouchi, S., Tarui, Y., Imaizumi, M., Takami, T., Ozeki, T.

Trans Tech Publications
9 Conference Proceedings Ion-Induced Anomalous Charge Collection Mechanisms in SiC Schottky Barrier Diodes

T. Makino, M. Deki, S. Onoda, N. Hoshino, H. Tsuchida

Trans Tech Publications
4 Conference Proceedings Minimization of Electric Field Enhancement at Electrode Edge by Surface High Resistive Layer in Ti/4H-SiC Schottky Barrier Diode

Ohtsuka, K., Sugimoto, H., Kinouchi, S.I., Tarui, Y., Imaizumi, M., Takami, T., Ozeki, T.

Trans Tech Publications
10 Conference Proceedings Demonstration of 13-kV Class Junction Barrier Schottky Diodes in 4H-SiC with Three- Zone Junction Termination Extension

H. Kitai, Y. Hozumi, H. Shiomi, M. Furumai, K. Omote, K. Fukuda

Trans Tech Publications
5 Conference Proceedings Driving Force of Stacking Fault Expansion in 4H-SiC PN Diode by In Situ Electroluminescence Imaging

K. Konishi, S. Yamamoto, S. Nakata, Y. Toyoda, S. Yamakawa

Trans Tech Publications
11 Conference Proceedings Challenges for Improving the Crystal Quality of 3C-SiC Verified with MOSFET Performance

H. Nagasawa, K. Yagi, T. Kawahara, N. Hatta, M. Abe

Trans Tech Publications
6 Conference Proceedings Novel Gate Oxide Process for Realization of High Threshold Voltage in 4H-SiC MOSFET

M. Furuhashi, T. Tanioka, M. Imaizumi, N. Miura, S. Yamakawa

Trans Tech Publications
12 Conference Proceedings On the Viability of Au/3C-SiC Schottky Barrier Diodes

J. Eriksson, M.H. Weng, F. Roccaforte, F. Giannazzo, S. Di Franco

Trans Tech Publications
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12