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30 results

Conference Proceedings

1. An Approach to Model Temperature Effects of Interface Traps in 4H-SiC

R. Rao ; S. Balaji ; K. Matocha ; V. Tilak

Pub. info.:	Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006. pp.497-500, 2007. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	556-557

Conference Proceedings

2. Time-Dependent Dielectric Breakdown of Thermal Oxides on 4H-SiC

K. Matocha ; R. Beaupre

Pub. info.:	Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006. pp.675-678, 2007. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	556-557

Conference Proceedings

3. Effect of Intercritical Annealing on Structure and Mechanical Properties of 10GN2MFA Grade Steel

L. Kander ; K. Matocha ; A. Korcak

Pub. info.:	Materials structure & micromechanics of fracture V : selected, peer reviewed papers from 5th international conference on Materials Structure & Micromechanics of Fracture (MSMF-5), Brno, Czech Republic, June 27-29, 2007. pp.377-380, 2008. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	567-568

Conference Proceedings

4. Advanced SiC Power MOSFETs Manufactured on 150mm SiC Wafers

K. Matocha ; S. Banerjee ; K. Chatty

Pub. info.:	Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy. pp.803-806, 2016. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	858

Conference Proceedings

5. 100 Amp, 1000 Volt Class 4H-Silicon Carbide MOSFET Modules

P.A. Losee ; K. Matocha ; S. Arthur ; E. Delgado ; R. Beaupre

Pub. info.:	Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain. pp.899-902, 2009. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	615-617

Conference Proceedings

6. Design, Yield and Process Capability Study of 8 kV 4H-SiC PIN Diodes

A.V. Bolotnikov ; P.A. Losee ; K. Matocha ; J. Nasadoski ; J. Glaser

Pub. info.:	Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA. pp.953-956, 2012. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	717-720

Conference Proceedings

7. Scattering Mechanisms in Silicon Carbide MOSFETs with Gate Oxides Fabricated Using Sodium Enhanced Oxidation Technique

V. Tilak ; K. Matocha ; G. Dunne ; F. Allerstam ; E.Ö. Sveinbjörnsson

Pub. info.:	Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007. pp.687-690, 2009. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	600-603

Conference Proceedings

8. Atomistic Scale Modeling of Factors Affecting the Channel Mobility in 4H-SiC MOSFETs

A. Chatterjee ; A. Bhat ; K. Matocha

Pub. info.:	Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007. pp.715-718, 2009. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	600-603

Conference Proceedings

9. Correlation between Thermal Oxide Breakdown and Defects in n-Type 4H-SiC Epitaxial Wafers

S.I. Soloviev ; K. Matocha ; G. Dunne ; Z. Stum

Pub. info.:	Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007. pp.775-778, 2009. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	600-603

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Conference Proceedings

10. 4kV Silicon Carbide MOSFETs

Z. Stum ; A.V. Bolotnikov ; P.A. Losee ; K. Matocha ; S. Arthur

Pub. info.:	Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd. pp.637-640, 2011. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	679-680

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Author: K. Matocha