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10 results

Conference Proceedings

1. The Growth of 3-Inch 4H-SiC Si-Face Epitaxial Wafer with Vicinal Off-Angle

K. Masumoto ; K. Kojima ; H. Okumura

Pub. info.:	Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation. pp.193-196, 2013. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	740-742

Conference Proceedings

2. Uniformity Improvement in Carrier Concentration on 150 mm Diameter C-Face Epitaxial Growth of 4H-SiC

J. Nishio ; H. Asamizu ; C. Kudou ; S. Ito ; K. Masumoto

Pub. info.:	Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France. pp.169-172, 2015. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	821-823

Conference Proceedings

3. Conversion of Basal Plane Dislocations to Threading Edge Dislocations in Growth of Epitaxial Layers on 4H-SiC Substrates with a Vicinal Off-Angle

K. Masumoto ; S. Ito ; H. Goto ; H. Yamaguchi ; K. Tamura

Pub. info.:	Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan. pp.99-102, 2014. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	778-780

Conference Proceedings

4. Dependence of the Growth Parameters on the In-Plane Distribution of 150 mm φ Size SiC Epitaxial Wafer

C. Kudou ; K. Tamura ; J. Nishio ; K. Masumoto ; K. Kojima

Pub. info.:	Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan. pp.139-142, 2014. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	778-780

Conference Proceedings

5. C-Face Epitaxial Growth of 4H-SiC on Quasi-150-mm Diameter Wafers with High Throughput

J. Nishio ; C. Kudou ; K. Tamura ; K. Masumoto ; K. Kojima

Pub. info.:	Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan. pp.109-112, 2014. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	778-780

Conference Proceedings

6. Homo-Epitaxial Growth on 2° Off-Cut 4H-SiC(0001) Si-Face Substrates Using H₂-SiH₄-C₃H₈ CVD System

K. Tamura ; C. Kudou ; K. Masumoto ; J. Nishio ; K. Kojima

Pub. info.:	Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan. pp.214-217, 2014. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	778-780

Conference Proceedings

7. Development of Homoepitaxial Growth Technique on 4H-SiC Vicinal Off Angled Substrate

K. Kojima ; K. Masumoto ; S. Ito ; A. Nagata ; H. Okumura

Pub. info.:	Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan. pp.125-130, 2014. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	778-780

Conference Proceedings

8. Influence of Epi-Layer Growth Pits on SiC Device Characteristics

C. Kudou ; H. Asamizu ; K. Tamura ; J. Nishio ; K. Masumoto

Pub. info.:	Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France. pp.177-180, 2015. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	821-823

Conference Proceedings

9. Characterization of Lanthanoid and Aluminum Based Oxide Film for Wide Bandgap Semiconductors

H. Aoki ; N. Komatsu ; M. Honjo ; K. Masumoto ; C. Kimura

Pub. info.:	THERMEC 2009, 6th International Conference on PROCESSING & MANUFACTURING OF ADVANCED MATERIALS, Berlin, Germany, August 25-29, 2009. pp.3943-3948, 2010. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	638-642

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Conference Proceedings

10. Standardization of Measurement of Nitrogen Concentration in CZ Silicon Crystals

N. Inoue ; A. Karen ; H. Yagi ; K. Masumoto ; M. Shinomiya ; K. Kashima ; K. Eifuku ; M. Koizumi ; T. Takahashi ; T. Takenawa ; K. Shingu

Pub. info.:	Silicon materials science and technology X. pp.453-460, 2006. Pennington, N.J.. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	2(2)

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Author: K. Masumoto