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62 results

Conference Proceedings

1. LER transfer from a mask to wafers

H. Tanabe ; G. Yoshizawa ; Y. Liu ; V. L. Tolani ; K. Kojima ; N. Hayashi

Pub. info.:	Photomask and next-generation lithography mask technology XIV. 2007. Bellingham, Wash.. SPIE - The International Society of Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	6607

Conference Proceedings

2. Effect of Additional Silane on In Situ H2 Etching prior to 4H-SiC Homoepitaxial Growth

K. Kojima ; S. Kuroda ; H. Okumura ; K. Arai

Pub. info.:	Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006. pp.85-88, 2007. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	556-557

Conference Proceedings

3. Development of Fuel Cell Hybrid Vehicle in Toyota

K. Kojima ; T. Morita

Pub. info.:	Proton exchange membrane fuel cells 8. pp.185-198, 2008. Pennington, NJ. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	16(2)

Conference Proceedings

4. Development of SiC Super-Junction (SJ) Device by Deep Trench-Filling Epitaxial Growth

R. Kosugi ; Y. Sakuma ; K. Kojima ; S. Itoh ; A. Nagata

Pub. info.:	Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation. pp.785-788, 2013. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	740-742

Conference Proceedings

5. Filling of Deep Trench by Epitaxial SiC Growth

K. Kojima ; A. Nagata ; S. Ito ; Y. Sakuma ; R. Kosugi

Pub. info.:	Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation. pp.793-796, 2013. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	740-742

Conference Proceedings

6. The Growth of 3-Inch 4H-SiC Si-Face Epitaxial Wafer with Vicinal Off-Angle

K. Masumoto ; K. Kojima ; H. Okumura

Pub. info.:	Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation. pp.193-196, 2013. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	740-742

Conference Proceedings

7. Low Resistivity, Thick Heavily Al-Doped 4H-SiC Epilayers Grown by Hot-Wall Chemical Vapor Deposition

S.Y. Ji ; K. Kojima ; Y. Ishida ; H. Tsuchida ; S. Yoshida

Pub. info.:	Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation. pp.181-184, 2013. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	740-742

Conference Proceedings

8. Effect of H₂ Carrier Gas on CVD Growth Rate for 4H-SiC Trench Filling

S.Y. Ji ; K. Kojima ; R. Kosugi ; S. Saito ; Y. Sakuma

Pub. info.:	Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy. pp.181-184, 2016. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	858

Conference Proceedings

9. A Novel Approach to Analysis of F-N Tunneling Characteristics in MOS Capacitor Having Oxide Thickness Fluctuation

K. Yamada ; J. Senzaki ; K. Kojima ; H. Okumura

Pub. info.:	Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy. pp.433-436, 2016. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	858

10.

Conference Proceedings

10. Analysis of Gate Oxide Nitridation Effect on SiC MOSFETs by Using Hall Measurement and Split C-V Measurement

M. Tsujimura ; H. Kitai ; H. Shiomi ; K. Kojima ; K. Fukuda

Pub. info.:	Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy. pp.441-444, 2016. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	858

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Author: K. Kojima