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Analysis on Resistance Change Mechanism of NiO-ReRAM Using Visualization Technique of Data Storage Area with Secondary Electron Image

Author(s):
Publication title:
Materials and physics for nonvolatile memories II : spring 2010, April 5-9, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
1250
Pub. Year:
2010
Page(from):
227
Page(to):
232
Pages:
6
Pub. info.:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781605112275 [1605112275]
Language:
English
Call no.:
M23500/1250
Type:
Conference Proceedings

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