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Conference Proceedings

1. InP Based Materials for Long Wavelength Optoelectronics Grown in Multiwafer Planetary Reactors

Beccard, R. ; Schmitz, D. ; Deufel, M. ; Prozmann, H. ; Jurgensen, H.

Pub. info.:	Proceedings of the twenty-sixth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXVI). pp.19-23, 1997. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	97-1

Conference Proceedings

2. MULTIWAFER PRODUCTION OF LONG WAVELENGTH EPITAXIAL MATERIALS

Heyen, M. ; Schmitz, D. ; Strauch, G. ; Jurgensen, H.

Pub. info.:	Long-wavelength semiconductor devices, materials, and processes : symposium held November 26-29, 1990, Boston, Massachusetts, U.S.A.. pp.313-320, 1991. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	216

Conference Proceedings

3. Multiwafer MOVPE of III-Nitride Films for LED and Laser Applications

Beccard, R. ; Schoen, O. ; Schineller, B. ; Schmitz, D. ; Heuken, M. ; Jurgensen, H.

Pub. info.:	Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.. pp.155-, 1998. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	482

Conference Proceedings

4. MOVPE of InP and GaAs Based Optoelectronic Materials in a Multiwafer Production Reactor Using TBA and TBP Exclusively

Schmitz, D. ; Lengeling, G. ; Beccard, R. ; Jurgensen, H.

Pub. info.:	Compound semiconductor electronics and photonics : symposium held April 8-10, 1996, San Francisco, California, U.S.A.. pp.327-, 1996. Pittsburgh, Penn. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	421

Conference Proceedings

5. Sublimation Sandwich Growth of Freestanding GaN Crystals

Vodakov, Yu. A. ; Mokhov, E. N. ; Ramm, M. G. ; Ramm, M. S. ; Roenkov, A. D. ; Ostroumov, A. G. ; Wolfson, A. A. ; Karpov, S. Yu. ; Makarov, Yu. N. ; Jurgensen, H.

Pub. info.:	Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.. pp.27-, 1998. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	482

Conference Proceedings

6. Reliable, Reproducible, and Efficient MOCVD of III-Nitrides in Production Scale Reactors

Wachtendorf, B. ; Beccard, R. ; Schmitz, D. ; Jurgensen, H. ; Schon, O. ; Heuken, M. ; Woelk, E.

Pub. info.:	Gallium nitride and related materials II : symposium held April 1-4, 1997, San Francisco, California, U.S.A.. pp.7-, 1997. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	468

Conference Proceedings

7. Very Large Planetary MOCVD Reactor for Optoelectronic Devices

Woelk, E. ; Strauch, G. ; Shmitz, D. ; Jurgensen, H. ; Ermer, J. ; Vijayakumar, P.S. ; Cavicchi, T.

Pub. info.:	Proceedings of the Symposium on Large Area Wafer Growth and Processing for Electronic and Photonic Devices and the twentieth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XX). pp.275-285, 1994. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	1994-18

Conference Proceedings

8. Large-Area Growth of InGaN/AlGaN Using In Situ Monitoring

Woelk, E. ; Schmitz, D. ; Strauch, G. ; Wachtendorf, B. ; Jurgensen, H.

Pub. info.:	III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.. pp.265-, 1997. Pittsburgh, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	449

Conference Proceedings

9. Structural and Optical Properties of AlGaN/GaN Quantum-Well Structures Grown by MOCVD on Sapphire

Niebuhr, R. ; Bachem, K. H. ; Behr, D. ; Hoffmann, C. ; Kaufmann, U. ; Lu, Y. ; Santic, B. ; Wagner, J. ; Arlery, M. ; Rouviere, J. L. ; Jurgensen, H.

Pub. info.:	III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.. pp.769-, 1997. Pittsburgh, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	449

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Conference Proceedings

10. Advances in IR-LED Technology

Hovel, R. ; Woelk, E. ; Deschler, M. ; Schmitz, D. ; Jurgensen, H.

Pub. info.:	Infrared applications of semiconductors - materials, processing, and devices : symposium held December 2-5, 1996, Boston, Massachusetts, U.S.A. pp.433-, 1997. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	450

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Author: Jurgensen, H.