1.

Conference Proceedings
Conference Proceedings
1. Electrical Characteristics of TaOxNy for High-k MOS Gate Dielectric Applications
Im, Kiju ; Jung, Hyungsuk ; Jeon, Sanghun ; Yang, Dooyoung ; Hwang, Hyunsang
Pub. info.: Gate stack and silicide issues in silicon processing : symposium held April 25-27, 2000, San Francisco, California, U.S.A..  pp.C1.8-,  2001.  Warrendale, PA.  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 611
2.

Conference Proceedings
Conference Proceedings
2. TaOxNy Gate Dielectric For ULSI MOS Device Applications
Jung, Hyungsuk ; Im, Kiju ; Jeon, Sanghun ; Yang, Dooyoung ; Hwang, Hyunsang
Pub. info.: Semiconductor technology (ISTC 2001) : proceedings of the 1st International Conference on Semiconductor Technology.  pp.328-335,  2001.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-17
3.

Conference Proceedings
Conference Proceedings
3. Electrical Characteristics of TaOxNy/ZrSixOy Stack Gate Dielectric for MOS Device Applications
Jung, Hyungsuk ; Yang, Hyundoek ; Im, Kiju ; Hwang, Hyunsang
Pub. info.: Gate stack and silicide issues in silicon processing II : symposium held April 17-19, 2001, San Francisco, California, U.S.A..  2002.  Warrendale, PA.  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 670