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38 results

Conference Proceedings

1. CHARACTERIZATION OF ZnS LAYERS GROWN BY MOCVD FOR THIN FILM ELECTROLUMINESCENCE (TFEL) DEVICES

Yu, J.E. ; Jones, K.S. ; Fang, J. ; Holloway, P.H. ; Pathangey, B. ; Bretschneider, E. ; Anderson, T.J.

Pub. info.:	Wide band gap semiconductors : symposium held December 2-6, 1991, Boston, Massachusetts, U.S.A.. pp.215-220, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	242

Conference Proceedings

2. TEMPERATURE DEPENDENCE OF ETCH RATE AND RESIDUAL DAMAGE IN REACTIVELY ION ETCHED GaAs AND A1GaAs

Pearton, S.J. ; Jones, K.S. ; Chakabarti, U.K. ; Emerson, B. ; Lane, E. ; Vasile, M.J. ; Fullowan, T.R. ; Hobson, W.S. ; Short, K.T. ; Haegel, N.M.

Pub. info.:	Laser and particle-beam chemical processes on surfaces : symposium held November 29-December 2, 1988, Boston, Massachusetts, U.S.A.. pp.489-494, 1989. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	129

Conference Proceedings

3. ACTIVATION AND INTERDIFFUSION CHARACTERISTICS IN IMPLANTED GaAs-A1GaAs HETEROSTRUCTURES ON Si

Pearton, S.J. ; Short, K.T. ; Jones, K.S. ; Vernon, S.M.

Pub. info.:	Advanced surface processes for optoelectronics : symposium held April 5-8, 1988, Reno, Nevada, U.S.A.. pp.97-104, 1988. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	126

Conference Proceedings

4. Evidence of Two Sources of Interstitials for TED in Boron Implanted Silicon

Jones, K.S. ; Liu, J. ; Zhang, L.

Pub. info.:	Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology. pp.116-126, 1996. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	96-4

Conference Proceedings

5. The Effect of TiSi2 Film Thickness and Growth on the Point Defect Perturbance in Si

Hemer, S.B. ; Jones, K.S. ; Gossman, H.-J. ; Tung, R.T. ; Poate, J.M. ; Luftman, H.S.

Pub. info.:	Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology. pp.337-347, 1996. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	96-4

Conference Proceedings

6. A Physically Based Modeling Of Boron TED In Amorphized Si

Earles, S.K. ; Law, Mark E. ; Jones, K.S. ; Brindos, Rich ; Talwar, Somit

Pub. info.:	Si front-end processing - physics and technology of dopant-defect interactions II : symposium held April 24-27, 2000, San Francisco, California, U.S.A.. pp.B10.4-, 2001. Warrendale, PA. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	610

Conference Proceedings

7. Boron Activation During Solid Phase Epitaxial Regrowth

Banisaukas, Heather Brye ; Jones, K.S. ; Talwar, Somit ; Falk, S. ; Downey, D.F.

Pub. info.:	Si front-end processing - physics and technology of dopant-defect interactions II : symposium held April 24-27, 2000, San Francisco, California, U.S.A.. pp.B10.2-, 2001. Warrendale, PA. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	610

Conference Proceedings

8. Study of Vacancy and Impurity Complexes in Si Solid-Phase Epitaxial Crystallization with Positron Annihilation Spectroscopy

Lindfors, C.D. ; Jones, K.S. ; Law, M.E. ; Downey, D.F. ; Murto, R.W.

Pub. info.:	Si front-end processing - physics and technology of dopant-defect interactions II : symposium held April 24-27, 2000, San Francisco, California, U.S.A.. pp.B10.1-, 2001. Warrendale, PA. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	610

Conference Proceedings

9. ION IMPLANT ACTIVATION AND REDISTRIBUTION IN AlXGa1-XAs

Pearton, S.J. ; Hobson, W.S. ; Von Neida, A.E. ; Haegel, N.M. ; Jones, K.S. ; Morris, N. ; Sealy, B.J.

Pub. info.:	Beam-solid interactions : physical phenomena : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.. pp.665-670, 1990. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	157

10.

Conference Proceedings

10. LOW-ENERGY IMPLANTATION OF Si AND Sn INTO GaAs

Rubart, W.S. ; Jones, K.S. ; Seiberling, L. ; Sadana, D.K.

Pub. info.:	Beam-solid interactions : physical phenomena : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.. pp.677-682, 1990. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	157

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