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49 results

Conference Proceedings

1. CORRELATION OF DISLOCATION LOOP FORMATION AND TIME DEPENDENT DIFFUSION OF IMPLANTED P-TYPE DOPANTS IN GALLIUM ARSENIDE

Robinson, H. G. ; Deal, M. D. ; Steveson, D. A. ; Jones, K. S.

Pub. info.:	Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A.. pp.715-720, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	240

Conference Proceedings

2. RAPID GROWTH KINETICS, MECHANICAL PROPERTIES AND THERMAL STABILITY OF SiOδ THIN FILMS GROWN BY RAPID THERMAL LOW PRESSURE CHEMICAL VAPOR DEPOSITION

Feingold, A. ; Katz, A. ; Pearton, S. J. ; Chakrabati, U. K. ; Jones, K. S.

Pub. info.:	Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A.. pp.425-430, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	240

Conference Proceedings

3. *ION IMPLANTATION RELATED DEFECTS IN GaAs

Jones, K. S. ; Bollong, M. ; Haynes, T. E. ; Deal, M. D. ; Allen, E. L. ; Robinson, H. G.

Pub. info.:	Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A.. pp.785-796, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	240

Conference Proceedings

4. A Study Of Boron Clustering Transients and Mechanisms in Doped Silicon

Lilak, Aaron Douglas ; Krishnamoorthy, Viswanath ; Vieira, David ; Law, Mark E. ; Jones, K. S.

Pub. info.:	Si front-end processing - physics and technology of dopant-defect interactions II : symposium held April 24-27, 2000, San Francisco, California, U.S.A.. pp.B5.4-, 2001. Warrendale, PA. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	610

Conference Proceedings

5. The Effect Of Impurities On Diffusion And Activation Of Ion Implanted Boron In Silicon

Robertson, L.S. ; Brindos, R. ; Jones, K. S. ; Law, Mark E. ; Downey, D. F. ; Falk, S. ; Liu, J.

Pub. info.:	Si front-end processing - physics and technology of dopant-defect interactions II : symposium held April 24-27, 2000, San Francisco, California, U.S.A.. pp.B5.8-, 2001. Warrendale, PA. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	610

Conference Proceedings

6. Reaction of Excess Silicon Interstitials in the Presence of Arsenic and Germanium

Brindos, R. ; Keys, P.H. ; Griglione, M. ; Jones, K. S. ; Law, M. E. ; Agarwal, Aditya ; Andideh, Ebrahim

Pub. info.:	Si front-end processing - physics and technology of dopant-defect interactions II : symposium held April 24-27, 2000, San Francisco, California, U.S.A.. pp.B8.4-, 2001. Warrendale, PA. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	610

Conference Proceedings

7. Energy Dependence Of Transient Enhanced Diffusion And {311} Defect Kinetics

Saleh, Hugo ; Law, Mark E. ; Bharatan, Sushil ; Jones, K. S. ; Krishnamoorthy, Wish ; Buyuklimanli, Temel

Pub. info.:	Si front-end processing - physics and technology of dopant-defect interactions II : symposium held April 24-27, 2000, San Francisco, California, U.S.A.. pp.B6.7-, 2001. Warrendale, PA. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	610

Conference Proceedings

8. Phosphorus / Silicon Interstitial Annealing After Ion Implantation

Keys, P. H. ; Brindos, R. ; Krishnamoorthy, V. ; Puga-Lambers, M. ; Jones, K. S. ; Law, Mark E.

Pub. info.:	Si front-end processing - physics and technology of dopant-defect interactions II : symposium held April 24-27, 2000, San Francisco, California, U.S.A.. pp.B6.6-, 2001. Warrendale, PA. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	610

Conference Proceedings

9. POINT DEFECT DETECTOR STUDIES OF OXIDIZED SILICON

Meng, H. L. ; Jones, K. S. ; Prussin, S.

Pub. info.:	Structure and properties of interfaces in materials : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A.. pp.101-106, 1992. Pittsburgh. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	238

10.

Conference Proceedings

10. NITROGEN CONTAMINATION IN SIMOX WAFER

Davis, G. E. ; Jones, K. S. ; Prussin, S.

Pub. info.:	Silicon-on-insulator and buried metals in semiconductors : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A.. pp.111-116, 1988. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	107

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