Search records | 東京工業大学附属図書館文献データベース

You can search for articles included in proceedings of international conferences and technical papers which Tokyo Tech Library holds.
Tokyo Tech members can obtain tables of contents of 17,000 foreign journals by SwetScan. Tokyo Tech Library does not cover all of them.
List of Searchable Databases

Search for other sites by same keyword(s).

CiNii Books

NDL Search

WebcatPlus

amazon

カーリル

WorldCat

Clear Form

Filter

Title:

Author:

ISBN / ISSN / Paper No:

Source Title:

Publisher:

Pub. Date:

～

Type:

Conference Proceedings

Technical Paper

Academic Journal

Clear Form

Select: Check all | Remove all

Sort order

10 | 50 | 100 / Per Page

52 results

Conference Proceedings

1. Junction Depth Reduction Of Ion Implanted Boron In Silicon Through Fluorine Ion Implantation

Robertson, L. S. ; Warnes, P. N. ; Jones, K. S. ; Earles, S. K. ; Law, M. E. ; Downey, D. F. ; Falk, S. ; Liu, J.

Pub. info.:	Si front-end processing - physics and technology of dopant-defect interactions II : symposium held April 24-27, 2000, San Francisco, California, U.S.A.. pp.B4.2-, 2001. Warrendale, PA. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	610

Conference Proceedings

2. Energy Dependence Of Transient Enhanced Diffusion And {311} Defect Kinetics

Saleh, Hugo ; Law, Mark E. ; Bharatan, Sushil ; Jones, K. S. ; Krishnamoorthy, Wish ; Buyuklimanli, Temel

Pub. info.:	Si front-end processing - physics and technology of dopant-defect interactions II : symposium held April 24-27, 2000, San Francisco, California, U.S.A.. pp.B6.7-, 2001. Warrendale, PA. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	610

Conference Proceedings

3. Reaction of Excess Silicon Interstitials in the Presence of Arsenic and Germanium

Brindos, R. ; Keys, P.H. ; Griglione, M. ; Jones, K. S. ; Law, M. E. ; Agarwal, Aditya ; Andideh, Ebrahim

Pub. info.:	Si front-end processing - physics and technology of dopant-defect interactions II : symposium held April 24-27, 2000, San Francisco, California, U.S.A.. pp.B8.4-, 2001. Warrendale, PA. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	610

Conference Proceedings

4. Phosphorus / Silicon Interstitial Annealing After Ion Implantation

Keys, P. H. ; Brindos, R. ; Krishnamoorthy, V. ; Puga-Lambers, M. ; Jones, K. S. ; Law, Mark E.

Pub. info.:	Si front-end processing - physics and technology of dopant-defect interactions II : symposium held April 24-27, 2000, San Francisco, California, U.S.A.. pp.B6.6-, 2001. Warrendale, PA. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	610

Conference Proceedings

5. OBSERVATION OF THE WURTZITE PHASE IN OMVPE GROWN 2nSe/GaAs: EFFECT ON IMPLANTATION AND RAPID THERMAL ANNEALING

Jones, K. S. ; Yu, J. ; Lowen, P. D. ; Kisker, D.

Pub. info.:	Ion beam processing of advanced electronic materials : symposium held April 25-27, 1989, San Diego, California, U.S.A.. pp.339-344, 1989. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	147

Conference Proceedings

6. POINT DEFECT DETECTOR STUDIES OF OXIDIZED SILICON

Meng, H. L. ; Jones, K. S. ; Prussin, S.

Pub. info.:	Structure and properties of interfaces in materials : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A.. pp.101-106, 1992. Pittsburgh. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	238

Conference Proceedings

7. THE EFFECT OF IMPLANT SPECIES ON THE STABILITY OF ION IMPLANTATION DAMAGE

Jones, K. S. ; Prussin, S. ; Venables, D.

Pub. info.:	Fundamentals of beam-solid interactions and transient thermal processing : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A.. pp.277-282, 1988. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	100

Conference Proceedings

8. STRAIN RELIEF AND DEFECT FORMATION IN HIGH DOSE OXYGEN IMPLANTED SILICON

Venables, D. ; Jones, K. S. ; Namavar, F. ; Manke, J. M.

Pub. info.:	Phase formation and modification by beam-solid interactions : symposium held December 2-6, 1991, Boston, Massachusetts, U.S.A.. pp.103-108, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	235

Conference Proceedings

9. SOLID PHASE EPITAXIAL REGROWTH OF IMPLANTATION AMORPHIZED Si0.7Ge0.3 GROWN ON (100) SILICON

Lee, C. ; Jones, K. S.

Pub. info.:	Phase formation and modification by beam-solid interactions : symposium held December 2-6, 1991, Boston, Massachusetts, U.S.A.. pp.57-64, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	235

10.

Conference Proceedings

10. POINT DEFECT DETECTOR STUDIES OF Ge + IMPLANTED SILICON UPON OXIDATION

Meng, H. L. ; Prussin, S. ; Jones, K. S.

Pub. info.:	Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A.. pp.253-258, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	262

52 results

Select: Check all | Remove all

Sort order

10 | 50 | 100 / Per Page

Filtering by:

Author: Jones, K. S.