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42 results

Conference Proceedings

1. HYDROGEN PASSIVATION OF Si AND Be DOPANTS IN InAlAs

Roos, G. ; Johnson, N. M. ; Pao, Y. C. ; Harris Jr., J. S.

Pub. info.:	Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A.. pp.667-672, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	240

Conference Proceedings

2. PICOSECOND OPTICAL DETERMINATION OF CARRIER LIFETIME IN POLYSILICON FILMS

Bambha, N. K. ; Nighan, W. L. ; Campbell, I. H. ; Fauchet, P. M. ; Johnson, N. M.

Pub. info.:	Polysilicon films and interfaces : symposium held December 1-3, 1987, Boston, Massachusetts, U.S.A.. pp.323-328, 1988. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	106

Conference Proceedings

3. NMOS DYNAMIC SHIFT REGISTERS IN CO2 LASER-CRYSTALLIZED SILICON THIN-FILMS ON FUSED QUARTZ

Chiang, A. ; Zarzycki, M> H. ; Meuli, W. P. ; Johnson, N. M.

Pub. info.:	Comparison of thin film transistor and SOI technologies : symposium held February 1984 in Albuquerque, New Mexico, U.S.A.. pp.119-126, 1984. New York. North Holland
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	33

Conference Proceedings

4. ELECTRONIC DEEP LEVELS IN LASER-CRYSTALLIZED SILICON THIN- FILM MOS CAPACITORS ON FUSED SILICA

Johnson, N. M. ; Moyer, M. D.

Pub. info.:	Comparison of thin film transistor and SOI technologies : symposium held February 1984 in Albuquerque, New Mexico, U.S.A.. pp.101-108, 1984. New York. North Holland
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	33

Conference Proceedings

5. DEFECT STATES IN GaAs AFTER RAPID THERMAL ANNEALING

Street, R. A. ; Johnson, N. M. ; Burnham, R. D.

Pub. info.:	Microscopic identification of electronic defects in semiconductors : symposium held April 15-18, 1985, San Francisco, California, U.S.A.. pp.333-338, 1985. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	46

Conference Proceedings

6. HYDROGEN PASSIVATION OF DEFECTS IN InGaAs/A1XGa1-Xas QUANTUM WELLS

Lord, S. M. ; Roos, G. ; Pezeshki, B. ; Harri Jr., J., S,. ; Johnson, N. M.

Pub. info.:	Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A.. pp.881-886, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	262

Conference Proceedings

7. *HYDROGEN IN COMPOUND SEMICONDUCTORS

Johnson, N. M.

Pub. info.:	Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A.. pp.369-382, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	262

Conference Proceedings

8. LOCAL BONDING STRUCTURE OF HYDROGEN IN CRYSTALLINE SILICON: NMR AND TEM STUDIES

Boyce, J. B. ; Johnson, N. M. ; Ready, S. E. ; Walker, J. ; Anderson, G. B.

Pub. info.:	Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A.. pp.401-406, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	262

Conference Proceedings

9. DONOR REACTIVATION KINETICS AND HYDROGEN REDISTRIBUTION IN THE SPACE CHARGE LAYER OF N-TYPE SILICON

Wu, Y.-A. ; Roos, G. ; Johnson, N. M. ; Herring C.

Pub. info.:	Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A.. pp.449-454, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	262

10.

Conference Proceedings

10. HYDROGEN PASSIVATION AND REACTIVATION OFDX CENTERS IN Se-DOPED AND Si-DOPED A1GaAs --A COMPARISON

Roos, G. ; Johnson, N. M. ; Herring C. ; Harris Jr., J. S.

Pub. info.:	Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A.. pp.419-424, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	262

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