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31 results

Conference Proceedings

1. THE BEHAVIOUR OF OXYGEN IN OXYGENATED N-TYPE HIGH-RESISTIVITY FLOAT-ZONE SILICON

Simoen, E. ; Claeys, C. ; Job, R. ; Ulyashin, A.G. ; Fahrner, W.R. ; Tonelli, G. ; Degryse, O. ; Clauws, P.

Pub. info.:	Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology. pp.912-924, 2002. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2002-2

Conference Proceedings

2. THE BEHAVIOUR OF OXYGEN IN OXYGENATED N-TYPE HIGH-RESISTIVITY FLOAT-ZONE SILICON

Simoen, E. ; Claeys, C. ; Job, R. ; Ulyashin, A.G. ; Fahrner, W.R. ; Tonelli, G. ; Degryse, O. ; Clauws, P.

Pub. info.:	Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology. pp.912-926, 2002. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2002-2

Conference Proceedings

3. Hydrogen Enhanced Thermal Donor Formation in p-Type Czochralski Silicon with a Denuded Zone

Ulyashin, U.G. ; Petlitskii, A.N. ; Job, R. ; Fahrner, W.R.

Pub. info.:	Proceedings of the Fifth International Symposium on High Purity Silicon V. pp.211-220, 1998. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	98-13

Conference Proceedings

4. Direct Proof of Argon Atoms Incorporated Into High-Purity Silicon Single Crystals During Growth in Argon Gas Ambient

Ulyashin, A.G. ; Job, R. ; Fahrner, W.R. ; Mudryi, A.V. ; Patuk, Al. ; Shakin, I.A.

Pub. info.:	High Purity Silicon VI : proceedings of the sixth International Symposium. pp.66-76, 2000. Bellingham, Wash.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2000-17

Conference Proceedings

5. Bulk and Surface Properties of Cz Silicon After Hydrogen Plasma

Job, R. ; Ulyashin, AG. ; Fahrner, W.R. ; Markevich, V.P. ; Murin, LI. ; LindstrtSm, J.L. ; Raiko, V. ; Engemann, J.

Pub. info.:	High Purity Silicon VI : proceedings of the sixth International Symposium. pp.209-222, 2000. Bellingham, Wash.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2000-17

Conference Proceedings

6. A Two-Step Low-Temperature Process for p-n Junction Formation Due to Hydrogen-Enhanced Thermal Donor Formation in p-Type Czochralski Silicon

Job, R. ; Fahrner, W. R. ; Kazuchits, N. M. ; Ulyashin, A. G.

Pub. info.:	Hydrogen in semiconductors and metals : symposium held April 13-17, 1998, San Francisco, California, U.S.A.. pp.337-, 1998. Warrendale, Penn.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	513

Conference Proceedings

7. Oxygen Gettering and Thermal Donor Formation at Postimplantation Annealing of Hydrogen-Implanted Czochralski Silicon

Ulyashin, A. G. ; Bumay, Yu. A. ; Fahrner, W. R. ; Ivanov, A. I. ; Job, R. ; Palmetshofer, L.

Pub. info.:	Defects and diffusion in silicon processing : symposium held April 1-4, 1997, San Francisco, California, U.S.A.. pp.95-, 1997. Pittsburg, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	469

Conference Proceedings

8. The Conversion of Czochralski Silicon From p-Type to n-Type by Hydrogen Plasma-Enhanced Thermal Donor Formation

Job, R. ; Borchert, D. ; Bumay, Yu. A. ; Fahrner, W. R. ; Grabosch, G. ; Khorunzhii, I. A. ; Ulyashin, A. G.

Pub. info.:	Defects and diffusion in silicon processing : symposium held April 1-4, 1997, San Francisco, California, U.S.A.. pp.101-, 1997. Pittsburg, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	469

Conference Proceedings

9. Temperature Sensor on Boron Ion Implanted Diamond

Job, R. ; Denisenko, A. V. ; Zaitsev, A. M. ; Werner, M. ; Melnikov, A. A. ; Fahrner, W. R.

Pub. info.:	Diamond for electronic applications. pp.249-, 1996. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	416

10.

Conference Proceedings

10. Comparison of Oxygen and Hydrogen Gettering at High-Temperature Postimplantation Annealing of Hydrogen- and Helium-Implanted Czochralski Silicon

Job, R. ; Fahrner, W. R. ; Ivanov, A. I. ; Palmetshofer, L. ; Ulyashin, A. G.

Pub. info.:	Defect and impurity engineered semiconductors, II : symposium held April 13-17, 1998, San Francisco, California, U.S.A.. pp.425-, 1998. Warrendale, Pa. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	510

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