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15 results

Conference Proceedings

1. Rare Earth-Doped III-N Light Emitting Diodes

Zavada, J.M. ; Kim, K.H. ; Lin, J.Y. ; Jiang, H.X. ; Chow, P. ; Hertog, B.

Pub. info.:	State-of-the-art program on compound semiconductors XLI and nitride and wide bandgap semiconductors for sensors, photonics, and electronics V : proceedings of the international symposia. pp.205-214, 2004. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2004-06

Conference Proceedings

2. Time-resolved photoluminescence studies of Al-rich AlGaN alloys

Li, J. ; Nam, K.B. ; Oder, T.N. ; Kim, K.H. ; Nakarmi, M.L. ; Lin, J.Y. ; Jiang, H.X.

Pub. info.:	Ultrafast phenomena in semiconductors VI : 21, 24-25 January, 2002, San Jose, USA. pp.250-257, 2002. Bellingham, Wash.. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	4643

Conference Proceedings

3. Exciton-polariton propagation in AlGaN/GaN quantum-well waveguides probe by time-resolved photoluminescence

Oder, T.N. ; Li, J. ; Lin, J.Y. ; Jiang, H.X.

Pub. info.:	Ultrafast phenomena in semiconductors VI : 21, 24-25 January, 2002, San Jose, USA. pp.258-265, 2002. Bellingham, Wash.. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	4643

Conference Proceedings

4. Non-Equilibrium Acceptor Concentration In GaN:Mg Grown by Metalorganic Chemical Vapor Deposition

Gong, Y. ; Kuskovoky, Igor L. ; Neumark, G.F. ; Li, J. ; Lin, J.Y. ; Jiang, H.X. ; Ferguson, I.

Pub. info.:	GaN and related alloys - 2003 : symposium held December 1-5, 2003, Boston, Massachusetts, U.S.A.. pp.491-496, 2004. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	798

Conference Proceedings

5. Delta-Doped AlGaN/GaN Heterostructure Field-Effect Transistors With Incorporation of AIN Epilayers

Fan, Z.Y. ; Nakarmi, M.L. ; Lin, J.Y. ; Jiang, H.X.

Pub. info.:	GaN and related alloys - 2003 : symposium held December 1-5, 2003, Boston, Massachusetts, U.S.A.. pp.101-106, 2004. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	798

Conference Proceedings

6. Visible and Infrared Emission from Er-doped III-N Light Emitting Diodes

Zavada, John M. ; Nyein, Ei Ei ; Hommerich, Uwe ; Li, J. ; Lin, J.Y. ; Jiang, H.X. ; Chow, P. ; Dong, Jian-Wei

Pub. info.:	Rare-earth doping for optoelectronic applications : symposium held March 29-31, 2005, San Francisco, California, U.S.A.. pp.59-66, 2005. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	866

Conference Proceedings

7. III-Nitride Photonic Crystals for Blue and UV Emitters

Shakya, J. ; Kim, K.H. ; Li, J. ; Lin, J.Y. ; Jiang, H.X. ; Oder, T.N.

Pub. info.:	GaN and related alloys - 2003 : symposium held December 1-5, 2003, Boston, Massachusetts, U.S.A.. pp.163-168, 2004. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	798

Conference Proceedings

8. AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors (MOSHFETs) With the Delta-Doped Barrier Layer

Fan, Z.Y. ; Li, J. ; Lin, J.Y. ; Jiang, H.X. ; Liu, Y. ; Bardwell, J.A. ; Webb, J.B. ; Tang, H.

Pub. info.:	GaN and related alloys - 2002 : symposium held December 2-6, Boston, Massachusetts, U.S.A.. pp.567-574, 2002. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	743

Conference Proceedings

9. Synthesis and Characterization of Ferromagnetic AIN and AIGaN Layers

Frazier, R.M. ; Thaler, G.T. ; Abernathy, C.R. ; Pearton, S.J. ; Nakarmi, M.L. ; Lin, J.Y. ; Jiang, H.X. ; Rairigh, R. ; Kelly, I. ; Hebard, A.F. ; Zavada, J.M. ; Wilson, R.G.

Pub. info.:	State-of-the-art program on compound semiconductors XXXIX and nitride and wide bandgap semiconductors for sensors, photonics, and electronics IV : proceedings of the international symposia. pp.384-389, 2003. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2003-11

10.

Conference Proceedings

10. Magnetic Doping of III-V Nitrides and Novel Room Temperature Sensing Applications

Zavada, J.M. ; Frazier, R.M. ; Abernathy, C.R. ; Pearton, S.J. ; Kelly, J. ; Rairigh, R. ; Hebard, A.F. ; Lin, I.Y. ; Jiang, H.X.

Pub. info.:	State-of-the-art program on compound semiconductors XXXIX and nitride and wide bandgap semiconductors for sensors, photonics, and electronics IV : proceedings of the international symposia. pp.327-337, 2003. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2003-11

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