1.

Conference Proceedings
Conference Proceedings
1. Si-Si PN Junctions Fabricated by Wafer Bonding in UHV
Hobart, K.D. ; Desmond, C.A. ; Kub, F.J. ; Twigg, M.E. ; Jernigan, G.G.
Pub. info.: Proceedings of the Fourth International Symposium on Semiconductor Wafer Bonding : science, technology, and applications.  pp.409-416,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-36
2.

Conference Proceedings
Conference Proceedings
2. Suppression Of Bulk Defects In Antimonide Superlattice Infrared Photodiodes
Aifer, E.H. ; Jackson, E.M. ; Bennett, B.R. ; Vurgaftman, I. ; Meyer, J.R. ; Jernigan, G.G.
Pub. info.: Materials and devices for optoelectronics and microphotonics : symposium held April 1-5, 2002, San Francisco, California, U.S.A..  pp.275-286,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 722
3.

Conference Proceedings
Conference Proceedings
3. Bonded Polycrystalline SiC Substrates for the Growth and Fabrication of GaN FETs
Hobart, K.D. ; Kub, F.J. ; Esser, R. ; Jernigan, G.G. ; Fatemi, M. ; Binari, S.C. ; Katzer, D.S. ; Dietrich, H.B. ; Kipshidze, G. ; Nikishin, S. ; Temkin, H.
Pub. info.: Semiconductor wafer bonding : science, technology, and applications : proceedings of the international symposia.  pp.92-99,  2001.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-27
4.

Conference Proceedings
Conference Proceedings
4. Light Emission from Interface Traps in SiC MOSFETs
Stahlbush, R.E. ; Jernigan, G.G.
Pub. info.: The physics and chemistry of SiO2 and the Si-SiO2 interface-4, 2000 : proceedings of the fourth International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface, Tronto, Canada, May 15-18, 2000.  pp.513-522,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-2