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13 results

Conference Proceedings

1. Process Induced Extended Defects in SiC Grown via Sublimation

Yakimova, R. ; Syvajarvi, M. ; Jacobson, H. ; Ciechonski, R.R. ; Vouroutzis, N. ; Stoemenos, J.

Pub. info.:	Silicon carbide 2002 -- materials, processing and devices : symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A.. pp.187-198, 2003. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	742

Conference Proceedings

2. Structural Defects in Electrically Degraded 4H-SiC PiN Diodes

Persson, P.O.A. ; Jacobson, H. ; Molina-Aldareguia, J.M. ; Bergman, J.P. ; Tuomi, T. ; Clegg, W.J. ; Janzen, E. ; Hultman, L.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.423-426, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

3. Behavior of Micropipes during Growth in 4H-SiC

Vouroutzis, N. ; Yakimova, R. ; Syvaejaervi, M. ; Jacobson, H. ; Stoemenos, J. ; Janzen, E.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.395-398, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

4. Characterization and Comparison of 4H-SiC(1120) and 4H-SiC(0001)8° Off-Axis Substrates and Homoepitaxial Films

Bishop, S.M. ; Preble, E.A. ; Hallin, C. ; Henry, A. ; Sarney, W. ; Chang, H.-R. ; Storasta, L. ; Jacobson, H. ; Reitmeier, Z.J. ; Wagner, B.P. ; Janzen, E. ; Davis, R.F.

Pub. info.:	Silicon carbide 2004--materials, processing and devices : symposium held April 14-15, 2004, San Francisco, California, U.S.A.. pp.53-58, 2004. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	815

Conference Proceedings

5. Lateral Enlargement of Silicon Carbide Crystals

Jacobson, H. ; Yakimova, R. ; Raback, P. ; Syvajarvi, M. ; Birch, J. ; Janzen, E.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.39-42, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

6. Properties of Different Stacking Faults that Cause Degradation in SiC PiN Diodes

Jacobson, H. ; Bergman, J.P. ; Hallin, C. ; Tuomi, T. ; Janzen, E.

Pub. info.:	Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden. pp.913-916, 2003. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	433-436

Conference Proceedings

7. Impact of the Initial Surface Conditions on Defect Appearance in 4H-SiC Epilayers

Yakimova, R. ; Jacobson, H. ; Syvajarvi, M. ; Kakanakova-Georgieva, A. ; Iakimov, T. ; Virojanadara, C. ; Johansson, L.I. ; Janzen, E.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.283-286, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

8. Doping-Related Strain in n-Doped 4H-SiC Crystals

Jacobson, H. ; Birch, J. ; Lindefelt, U. ; Hallin, C. ; Henry, A. ; Yakimova, R. ; Janzen, E.

Pub. info.:	Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden. pp.269-272, 2003. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	433-436

Conference Proceedings

9. Impact of the Initial Surface Conditions on Defect Appearance in 4H-SiC Epilayers

Yakimova, R. ; Jacobson, H. ; Syvaejaervi, M. ; Kakanakova-Georgieva, A. ; Iakimov, T. ; Virojanadara, C. ; Johansson, L.I. ; Janzen, E.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.283-286, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

10.

Conference Proceedings

10. Growth of Homoepitaxial Films on 4H-SiC(11-20)and 8° Off-Axis 4H-SiC(0001) Substrates and their Characterization

Bishop, S.M. ; Preble, E.A. ; Hallin, C. ; Henry, A. ; Storasta, L. ; Jacobson, H. ; Wagner, B.P. ; Reitmeier, Z.J. ; Janzen, E. ; Davis, R.F.

Pub. info.:	Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003. pp.221-224, 2004. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	457-460

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Author: Jacobson, H.