1.

Conference Proceedings
Conference Proceedings
1. Sodium, Rubidium and Cesium in the Gate Oxides of SiC MOSFETs
B.R. Tuttle ; S. Dhar ; S.H. Ryu ; X. Zhu ; J.R. Williams
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.453-456,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
2.

Conference Proceedings
Conference Proceedings
2. High Frequency Inversion Capacitance Measurements for 6H-SiC n-MOS Capacitors from 450 to 600°C
R.N. Ghosh ; R. Loloee ; T. Isaacs-Smith ; J.R. Williams
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.739-742,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
3.

Conference Proceedings
Conference Proceedings
3. Temperature Dependence of Inversion Layer Carrier Concentration and Hall Mobility in 4H-SiC MOSFETs
S. Dhar ; A.C. Ahyi ; J.R. Williams ; S.H. Ryu ; A.K. Agarwal
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.713-716,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
4.

Conference Proceedings
Conference Proceedings
4. Electron Trapping in 4H-SiC MOS Capacitors Fabricated by Sodium-Enhanced Oxidation
A.F. Basile ; A.C. Ahyi ; L.C. Feldman ; J.R. Williams ; P.M. Mooney
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.757-760,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
5.

Conference Proceedings
Conference Proceedings
5. Effects of N Incorporation on Electron Traps at SiO2/SiC Interfaces
A.F. Basile ; S. Dhar ; J.R. Williams ; L.C. Feldman ; P.M. Mooney
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.717-720,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
6.

Conference Proceedings
Conference Proceedings
6. Effect of NO Annealing on 6H- and 4H-SiC MOS Interface States
A.F. Basile ; J. Rozen ; X.D. Chen ; S. Dhar ; J.R. Williams
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.499-502,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
7.

Conference Proceedings
Conference Proceedings
7. The Limits of Post Oxidation Annealing in NO
J. Rozen ; X.G. Zhu ; A.C. Ahyi ; J.R. Williams ; L.C. Feldman
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.693-696,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
8.

Conference Proceedings
Conference Proceedings
8. Time integration using wavelets
K. Amaratunga ; J.R. Williams
Pub. info.: Wavelet applications II : proceedings : 17-21 April 1995, Orlando, Florida.  pp.894-902,  1995.  Bellingham, WA.  Society of Photo-optical Instrumentation Engineers
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 2491