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Conference Proceedings

1. Ohmic Contact for C-face n-Type 4H-SiC with Reduced Graphite Precipitation

Maeyama, Y. ; Nishikawa, K. ; Fukuda, Y. ; Shimizu, M. ; Sato, M. ; Ono, J. ; Iwakuro, H.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.867-870, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

2. Point-Contact Current Voltage Technique for Depth Profiling of Dopants in Silicon Carbide

Fukuda, Y. ; Nishikawa, K. ; Shimizu, M. ; Iwakuro, H.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.671-674, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

3. Stability of Molybdenum Schottky Contact to Silicon Carbide

Nishikawa, K. ; Shimizu, M. ; Foster, B. ; Iwakuro, H.

Pub. info.:	Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000. pp.611-614, 2001. Uetikon-Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	353-356

Conference Proceedings

4. Point-Contact Current Voltage Technique for Depth Profiling of Dopants in Silicon Carbide

Fukuda, Y. ; Nishikawa, K. ; Shimizu, M. ; Iwakuro, H.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.671-674, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393