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13 results

Conference Proceedings

1. Pulsed metal vapor ion lasers

Sem,M.F. ; Ivanov,I.G.

Pub. info.:	International Conference on Atomic and Molecular Pulsed Lasers II : 22-26 September 1997, Tomsk, Russia. pp.120-129, 1998. Bellingham, Wash., USA. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3403

Conference Proceedings

2. Processes in hollow cathode discharge excited by steady-state and pulse currents

Kalinchenko,G.A. ; Ivanov,I.G.

Pub. info.:	Saratov Fall Meeting 2000 : Laser Physics and Photonics; and Spectroscopy and Molecular Modeling, 3-7 October 2000, Saratov, Russia. pp.21-28, 2000. Bellingham, Wash., USA. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	4243

Conference Proceedings

3. Growth and Characterisation of Thick SiC Epilayers by High Temperature CVD

Ellison,A. ; Kimoto,T. ; Ivanov,I.G. ; Wahab,Q. ; Henry,A. ; Kordina,O. ; Zhang,J. ; Hemmingsson,C.G. ; Gu,C.-Yu. ; Leys,M.R. ; Janzen,E.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part1 pp.103-106, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

Conference Proceedings

4. 6H-SiC Crystallinity Behaviour upon B Implantation Studied by Raman Scattering

Paskova,T. ; Valcheva,E. ; Ivanov,I.G. ; Yakimova,R. ; Savage,S. ; Nordell,N. ; Harris,C.I.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part2 pp.741-744, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

Conference Proceedings

5. CVD Growth and Characterisation of SiC Epitaxial Layers on Faces Perpendicular to the(0001)Basal Plane

Hallin,C. ; Ellison,A. ; Ivanov,I.G. ; Henry,A. ; Son,N.T. ; Janzen,E.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part1 pp.123-126, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

Conference Proceedings

6. Cathodoluminescence of Defect Regions in SiC Epi-Films

MacMillan,M.F. ; Hultman,L. ; Hallin,C. ; Ivanov,I.G. ; Henry,A. ; Janzen,E. ; Galloway,S.A.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part1 pp.653-656, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

Conference Proceedings

7. Exciton Dynamics in Homoepitaxial GaN

Monemar,B. ; Bergman,J.P. ; Ivanov,I.G. ; Baranowski,J.M. ; Pakula,K. ; Grzegory,I. ; Porowski,S.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part2 pp.1275-1278, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

Conference Proceedings

8. Near Band-Gap Emission in V-Inrplanted and Annealed 4H-SiC

Henry,A. ; Egilsson,T. ; Ivanov,I.G. ; Harris,C.I. ; Savage,S. ; Janzen,E.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part1 pp.497-500, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

Conference Proceedings

9. Changes in the Exciton-Related Photoluminescence of 4H- and 6H-SiC Induced by Uniaxial Stress

Ivanov,I.G. ; Lindefelt,U. ; Henry,A. ; Egilsson,T. ; Kordina,O. ; Janzen,E.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part1 pp.489-492, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

10.

Conference Proceedings

10. Ga Bound Excitons in 6H-SiC

Henry,A. ; Hallin,C. ; Ivanov,I.G. ; Bergnan,J.P. ; Kordina,O. ; Monemar,B. ; Janzen,E.

Pub. info.:	Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995. pp.91-96, 1995. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	196-201

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Author: Ivanov,I.G.