1.

Conference Proceedings
Conference Proceedings
1. (4.26) 8:40 - 8:43 PM - Process Integration of a New Method for Formation of Shallow Junctions in MOSFET Structures using Recessed and Selectively Regrown Si1_xGex
Isheden, C. ; Radamson, H. H. ; Hellstrom, P.-E. ; Ostling, M. (KTH)
Pub. info.: SiGe: materials, processing, and devices : proceedings of the First international symposium.  pp.335-340,  2004.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2004-07
2.

Conference Proceedings
Conference Proceedings
2. Novel Integration Concepts for SiGe-Based RF-MOSFETs (Invited paper)
Ostling, M. ; Malm, B. G. ; Hellstrom, P-E. ; Radamson, H.H. ; Isheden, C. ; Seger, J. ; von Haartman, M. ; Zhang, S.-L.
Pub. info.: ULSI Process Integration : proceedings of the International Symposium.  pp.270-284,  2005.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-06