1.

Conference Proceedings
Conference Proceedings
1. Fast Growth Rate Epitaxy on 4° Off-Cut 4-Inch Diameter 4H-SiC Wafers
J. Ul Hassan ; H.T. Bae ; L. Lilja ; I. Farkas ; I. Kim
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.179-182,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
2.

Conference Proceedings
Conference Proceedings
2. Influence of n-Type Doping Levels on Carrier Lifetime in 4H-SiC Epitaxial Layers
L. Lilja ; I. Farkas ; I. Booker ; J. ul Hassan ; E. Janzén ; J.P. Bergman
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.238-241,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897