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11 results

Conference Proceedings

1. Electrical Characteristics of Thermally Stable ZrOxNy by NH3 Annealing of ZrO2

Jeon, Sanghun ; Choi, Chel-Jong ; Seong, Tae-Yeon ; Hwang, Hyunsang

Pub. info.:	Semiconductor technology (ISTC 2001) : proceedings of the 1st International Conference on Semiconductor Technology. pp.382-386, 2001. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2001-17

Conference Proceedings

2. ULTRATHIN OXYNITRIDE GATE DIELECTRIC PREPARED BY RAPID THERMAL OXIDATION IN N2O FOR ULSI APPLICATIONS

Hwang, Hyunsang ; Ting, Wenchi ; Kwong, Dim-Lee ; Lee, Jack

Pub. info.:	Rapid thermal and integrated processing : symposium held April 30-May 3, 1991, Anaheim, California, U.S.A.. pp.379-384, 1991. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	224

Conference Proceedings

3. Atomic Force Microscope Study of Two-Dimensional Dopant Delineation by Selective Chemical Etching

Choi, Kwang-Ki ; Seong, Tae-Yeon ; Lee, Seonghoon ; Hwang, Hyunsang ; Sohn, Yong Sun

Pub. info.:	Semiconductor process and device performance modeling : symposium held December 2-3, 1997, Boston, Massachusetts, U.S.A.. pp.53-, 1998. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	490

Conference Proceedings

4. Charging Effect in Amorphous Silicon Quantum Dots Embedded in Silicon Nitride

Park, Nae-Man ; Jeon, Sang-Hun ; Hwang, Hyunsang ; Choi, Suk-Ho ; Park, Seong-Ju

Pub. info.:	Microcrystalline and nanocrystalline semiconductors-2000 : symposium held November 27-30, 2000, Boston, Massachusetts, U.S.A.. 2001. Warrendale, PA.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	638

Conference Proceedings

5. Ultra-Shallow P+/N Junction Formed By Plasma Ion Implantation

Baek, S.K. ; Choi, C.J. ; Seong, T.-Y. ; Hwang, Hyunsang ; Kim, H. K. ; Moon, D. W.

Pub. info.:	Si front-end processing - physics and technology of dopant-defect interactions II : symposium held April 24-27, 2000, San Francisco, California, U.S.A.. pp.B3.7-, 2001. Warrendale, PA. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	610

Conference Proceedings

6. Ultrathin Gate Oxide Prepared by Nitridation In ND3 For MOS Device Applications

Kwon, Hyungshin ; Hwang, Hyunsang

Pub. info.:	Gate stack and silicide issues in silicon processing : symposium held April 25-27, 2000, San Francisco, California, U.S.A.. pp.C2.4-, 2001. Warrendale, PA. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	611

Conference Proceedings

7. Electrical Characteristics of TaOxNy for High-k MOS Gate Dielectric Applications

Im, Kiju ; Jung, Hyungsuk ; Jeon, Sanghun ; Yang, Dooyoung ; Hwang, Hyunsang

Pub. info.:	Gate stack and silicide issues in silicon processing : symposium held April 25-27, 2000, San Francisco, California, U.S.A.. pp.C1.8-, 2001. Warrendale, PA. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	611

Conference Proceedings

8. The Influence Of Low Temperature Pre-Annealing On The Defect Removal And The Reduction Of Junction Depth In Excimer Laser Annealing

Baek, Sungkweon ; Jang, Taesung ; Hwang, Hyunsang

Pub. info.:	Silicon front-end junction formation technologies : symposium held April 2-4, 2002, San Francisco, California, U.S.A.. pp.57-64, 2002. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	717

Conference Proceedings

9. TaOxNy Gate Dielectric For ULSI MOS Device Applications

Jung, Hyungsuk ; Im, Kiju ; Jeon, Sanghun ; Yang, Dooyoung ; Hwang, Hyunsang

Pub. info.:	Semiconductor technology (ISTC 2001) : proceedings of the 1st International Conference on Semiconductor Technology. pp.328-335, 2001. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2001-17

10.

Conference Proceedings

10. Electrical Characteristics of TaOxNy/ZrSixOy Stack Gate Dielectric for MOS Device Applications

Jung, Hyungsuk ; Yang, Hyundoek ; Im, Kiju ; Hwang, Hyunsang

Pub. info.:	Gate stack and silicide issues in silicon processing II : symposium held April 17-19, 2001, San Francisco, California, U.S.A.. 2002. Warrendale, PA. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	670

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