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1.

Conference Proceedings

1. Structure and Dynamics of Si Interstitials at Si(001) and Si(001)/SiO2

Kirichenko, T.A. ; Yu, D. ; Banerjee, S.K. ; Hwang, G.S.

Pub. info.:	Advanced short-time thermal processing for Si-based CMOS devices : proceedings of the international symposium. pp.112-119, 2004. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2004-01

2.

Conference Proceedings

2. Mask Charging Effects on Feature Profile Evolution during High Density Plasma Etching

Hwang, G.S. ; Giapis, K.P.

Pub. info.:	Proceedings of the twelfth International Symposium on Plasma Processing. pp.66-70, 1998. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	98-4

3.

Conference Proceedings

3. Interaction between Interstitials and Arsenic-Vacancy Complexes in Crystalline Silicon

Harrison, S.A. ; Edgar, T.F ; Hwang, G.S.

Pub. info.:	Advanced short-time thermal processing for Si-based CMOS devices : proceedings of the international symposium. pp.120-126, 2004. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2004-01

4.

Conference Proceedings

4. Two-Dimensional Computational Model for Electrochemical Micromachining with Ultrashort Voltages Pulses

Kenney, J.A. ; Hwang, G.S.

Pub. info.:	Electrochemical processes in ULSI and MEMS : proceedings of the international symposium. pp.412-419, 2005. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2004-17

5.

Conference Proceedings

5. Profile Evolution During Neutral Beam Etching

Anderson, C.M. ; Hwang, G.S. ; Gordon, M.J. ; Giapis, K.P.

Pub. info.:	Proceedings of the eleventh International Symposium on Plasma Processing. pp.357-361, 1996. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	96-12

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