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Effects of buried oxide and point defect saturation on redistribution of boron in thin-film silicon-on-insulator (TFSOI)

Author(s):
Publication title:
Proceedings of the Eighth International Symposium on Silicon-on-Insulator Technology and Devices
Title of ser.:
Electrochemical Society Proceedings Series
Ser. no.:
97-23
Pub. Year:
1997
Page(from):
63
Page(to):
68
Pub. info.:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566771764 [1566771765]
Language:
English
Call no.:
E23400/97-23
Type:
Conference Proceedings

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