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14 results

Conference Proceedings

1. Characteristics of Novel InGaAsN Double Heterojunction Bipolar Transistors

Li, N.Y ; Chang, P C. ; Baca, A.G. ; Laroche, J.R. ; Ren, F ; Annou, E. ; Sharps, P R. ; Hou, H.Q.

Pub. info.:	High Speed Compound Semiconductor Devices for Wireless Applications and State-of-the-Art Program on Compound Semiconductors (XXXIII) : proceedings of the International Symposium. pp.69-81, 2000. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2000-18

Conference Proceedings

2. High Detectivity GaAs/AlGaAs MQW Photovoltaic LWIR Detector using Tunneling Current Blocking Layer and Doping Gradient Approach

Wu, C.S. ; Wen, C.P. ; Reiner, P. ; Tu, C.W. ; Hou, H.Q. ; Hu, M. ; De Los Santos, H.J.

Pub. info.:	Proceedings of the Symposium on Large Area Wafer Growth and Processing for Electronic and Photonic Devices and the twentieth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XX). pp.48-55, 1994. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	1994-18

Conference Proceedings

3. The Aluminum-Free P-n-P InGaAsN Double Heterojunction Bipolar Transistors

Chang, P.C. ; Li, N.Y. ; Baca, A.G. ; Monie, C. ; Larnche, J.R. ; Hou, H.Q. ; Ren, F ; Pearton, S.J.

Pub. info.:	High Speed Compound Semiconductor Devices for Wireless Applications and State-of-the-Art Program on Compound Semiconductors (XXXIII) : proceedings of the International Symposium. pp.192-197, 2000. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2000-18

Conference Proceedings

4. REFLECTION HIGH-ENERGY-ELECTRON DIFFRACTION STUDY OF InP AND InAs(100) IN GAS-SOURCE MOLECULAR BEAM EPITAXY

Chin, T.P. ; Liang, B.W. ; Hou, H.Q. ; Tu, C.W.

Pub. info.:	Long-wavelength semiconductor devices, materials, and processes : symposium held November 26-29, 1990, Boston, Massachusetts, U.S.A.. pp.517-522, 1991. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	216

Conference Proceedings

5. Device Characteristics of the PnP AlGaAs/InGaAsN/GaAs Double Heterojunction Bipolar Transistor

Chang, P.C. ; Li, N.Y. ; Laroche, J.R. ; Baca, A.G. ; Hou, H.Q. ; Ren, F.

Pub. info.:	Compound semiconductor power transistors II : proceedings of the second international symposium and state-of-the-art program on compound semiconductors (SOTAPOCS XXXII) : proceedings of the thirty-second international symposium. pp.305-312, 2000. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2000-1

Conference Proceedings

6. Wet Oxidation of AlGaAs: Arsenic Barriers on the Road to MIS

Ashby, C.I.H. ; Sullivan, J.P. ; Newcomer, P.P. ; Missert, N.A. ; Hou, H.Q. ; Hammons, B.E. ; Baca, A.G.

Pub. info.:	Proceedings of the twenty-sixth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXVI). pp.58-65, 1997. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	97-1

Conference Proceedings

7. Design Investigation of InGaAsN-based Pnp Heteroj unction Bipolar Transistors *

Monier, C. ; Chang, P.C. ; Baca, A.G. ; Li, N.Y. ; Larache, J.R. ; Hou, H.Q. ; Ren, F. ; Pearton, S.J.

Pub. info.:	III-Nitride Based Semiconductor Electronics and Optical Devices and thirty-fourth State-of-the-Art-Program on Compound Semiconductors (SOTAPOCS XXXIV) : proceedings of the International Symposia. pp.293-299, 2001. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2001-1

Conference Proceedings

8. MOCVD Grown InGaAsN Using efficent and Novel Precursor, Tertibutylhydrazine, for optoelectronic device applications. (Invited)

Li, N.V. ; Sharps, P.R. ; Newman, F. ; Chang, P.C. ; Baca, A.G. ; Hou, H.Q.

Pub. info.:	State-of-the-art-program on compound semiconductors (STAPOCS XXXV) : proceedings of the international symposium. pp.17-22, 2001. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2001-20

Conference Proceedings

9. High-Speed Performance of NpN InGaAsN-based double Heterojunction Bipolar Transistor (Invited)

Monier, C. ; Baca, A.G. ; Chang, P.C. ; Newman, F. ; Li, N.Y. ; Armour, E. ; Briggs, R.D. ; Hou, H.Q.

Pub. info.:	State-of-the-art-program on compound semiconductors (STAPOCS XXXV) : proceedings of the international symposium. pp.62-69, 2001. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2001-20

10.

Conference Proceedings

10. Growth of Vertical-Cavity Surface Emitting Lasers by Metalorganic Vapor Phase Epitaxy

Hou, H.Q. ; Choquette, K.D. ; Crawford, M.H. ; Lear, K.L. ; Hammons, B.E.D.

Pub. info.:	Proceedings of the Symposium on High Speed III-V Electronics for Wireless Applications and the twenty-fifth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXV). pp.201-209, 1996. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	96-15

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Author: Hou, H.Q.