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16 results

Conference Proceedings

1. Material Synthesis and Infrared Optical Properties of Transition Metal Doped Binary and Ternary II-VI Semiconductors

Hommerich, U. ; Nyein, Ei ; Trivedi, Sudhir ; Bluiett, Althea

Pub. info.:	Progress in semiconductor materials V--novel materials and electronic and optoelectronic applications : symposium held November 28-December 1, 2005, Boston, Massachusetts, U.S.A.. pp.103-108, 2006. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	891

Conference Proceedings

2. FLUORESCENCE DYNAMICS OF Er3+ IONS IN MBE-GROWN GaN-THIN FILMS

Pelle, F. ; Auzel, F. ; Zavada, J.M. ; Hommerich, U. ; Lee, D.S. ; Steckl, A.J.

Pub. info.:	Physics of laser crystals. pp.109-124, 2003. Dordrecht. Kluwer Academic Publishers
Title of ser.:	NATO science series. Series 2, Mathematics, physics and chemistry
Ser. no.:	126

Conference Proceedings

3. Development of solid state laser material using ceramic yttria [5887-47]

Prasad, N. ; Trivedi, S. B. ; Kutcher, S. ; Wang, C. -C ; Jagannathan, G. ; Hommerich, U. ; Shukla, V. ; Sadangi, R. ; Kear, B.

Pub. info.:	Lidar remote sensing for industry and environmental monitoring VI : 2-3 August 2005, San Diego, California, USA. pp.588717-588718, 2005. Bellingham, Wash.. SPIE - The International Society of Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	5887

Conference Proceedings

4. Incorporation and Optical Activation of Er in Group III-N Materials Grown by Metalorganic Molecular-Beam Epitaxy

MacKenzie, J. D. ; Abernathy, C. R. ; Pearton, S. J. ; Donovan, S. M. ; Hommerich, U. ; Thaik, M. ; Wu, X. ; Ren, F. ; Wilson, R. G. ; Zavada, J. M.

Pub. info.:	Gallium nitride and related materials II : symposium held April 1-4, 1997, San Francisco, California, U.S.A.. pp.123-, 1997. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	468

Conference Proceedings

5. Hydrogen Passivation of Er-Doped AlN

Pearton, S. J. ; Abernathy, C. R. ; MacKenzie, J. D. ; Hommerich, U. ; Zavada, J. M. ; Ren, F. ; Wilson, R. G. ; Schwartz, R. N.

Pub. info.:	Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A.. pp.169-, 1998. Warrendale, Penn.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	483

Conference Proceedings

6. High-Temperature Photoluminescence and Photo-luminescence Excitation Spectroscopy of Er-Doped Gallium Nitride

Hommerich, U. ; Thaik, Myo ; Robinson-Brown, T. ; MacKenzie, J. D. ; Abernathy, C. R. ; Pearton, S. J. ; Wilson, R. G. ; Schwartz, R. N. ; Zavada, J. M.

Pub. info.:	Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.. pp.685-, 1998. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	482

Conference Proceedings

7. Optical Characterization of Erbium Doped III-Nitrides Prepared by Metalorganic Molecular Beam Epitaxy

Hommerich, U. ; Seo, J. T. ; Thaik, M. ; MacKenzie, J. D. ; Abernathy, C. R. ; Pearton, S. J. ; Wilson, R. G. ; Zavada, J. M.

Pub. info.:	GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A.. pp.G11.6.1-, 1999. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	537

Conference Proceedings

8. Luminescence From Erbium-Doped Gallium Nitride Thin Films

Zavada, J. M. ; Thaik, M. ; Hommerich, U. ; Mackenzie, J. D. ; Abernathy, C. R. ; Ren, F. ; Shen, H. ; Pamulapati, J. ; Jiang, H. ; Lin, J. ; Wilson, R. G.

Pub. info.:	GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A.. pp.G11.1.1-, 1999. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	537

Conference Proceedings

9. Growth and Luminescence Properties of III-N:Er Materials Doped During Chemical-Beam Epitaxy

MacKenzie, J. D. ; Abernathy, C. R. ; Pearton, S. J. ; Hommerich, U. ; Seo, J. T. ; Ren, F. ; Wilson, R. G. ; Chen, P. ; Zavada, J. M.

Pub. info.:	Defect and impurity engineered semiconductors, II : symposium held April 13-17, 1998, San Francisco, California, U.S.A.. pp.325-, 1998. Warrendale, Pa. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	510

10.

Conference Proceedings

10. Characterization of Visible and Infrared (1.54 ｦﾌm) Luminescence from Er-Doped Porous Si

White, R. ; Wu, X. ; Hommerich, U. ; Namavar, F. ; Cremins-Costa, A. M.

Pub. info.:	Rare earth doped semiconductors II : symposium held April 8-10, 1996, San Francisco, California, U.S.A.. pp.137-, 1996. Pittsburgh. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	422

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