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Time Resolved Photoluminescence Spectroscopy on GaN Epitaxial Layers

Author(s):
Meyer, B. K.
Volm, D.
Wetzel, C.
Eckey, L.
Holst, J.-Ch.
Maxim, P.
Heitz, R.
Hoffmann, A.
Broser, I.
Mokhov, E. N.
Baranov, P. G.
Qiu, C.
Pankove, J. I.
8 more
Publication title:
Defect and impurity engineered semiconductors and devices : symposium held April 17-21, 1995, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
378
Pub. Year:
1995
Page(from):
521
Pub. info.:
Pittsburgh, PA: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558992818 [1558992812]
Language:
English
Call no.:
M23500/378
Type:
Conference Proceedings

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