1.

Conference Proceedings
Conference Proceedings
1. X-Band ENDOR of Boron and Beryllium Acceptors in Silicon Carbide
Hofstaetter,A. ; Meyer,B.K. ; Scharmann,A. ; Baranov,P.G. ; Ilyin,I.V. ; Mokhov,E.N.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.595-598,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
2.

Conference Proceedings
Conference Proceedings
2. On the Identification of an Al Related Deep Centre in 4H-SiC-Self-Compensation in SiC?
Meyer,B.K. ; Hofstaetter,A. ; Baranov,P.G.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part1  pp.591-594,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268
3.

Conference Proceedings
Conference Proceedings
3. Defects spectroscopy in β-Ga2O3
Meyer,B.K. ; Leib,U. ; Hofstaetter,A. ; Krummel,C. ; Kohl,D.
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part3  pp.1473-1478,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263