1.

Conference Proceedings
Conference Proceedings
1. WITH WAFERS WITH NITROGEN DOPED SUBSTRATES AND THEIR GETTERING BEHAVIOR
Sebmolke, R. ; Blietz, M. ; Hoelzl, R. ; Menzel, D. ; Bender, H.
Pub. info.: Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology.  pp.658-669,  2002.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-2
2.

Conference Proceedings
Conference Proceedings
2. ARGON-ANNEALED 300mm WAFERS COMPLEMENTING PP- EPITAXIAL LAYERS
Muller, T. ; Siebert, W. ; Messmann, K. ; Wablich, R. ; Krottenthaler, P. ; Hoelzl, R. ; Ikari, A. ; von Ammon, W.
Pub. info.: Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology.  pp.194-208,  2002.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-2
3.

Conference Proceedings
Conference Proceedings
3. ARGON-ANNEALED 300mm WAFERS COMPLEMENTING PP- EPITAXIAL LAYERS
Muller, T. ; Siebert, W. ; Messmann, K. ; Wablich, R. ; Krottenthaler, P. ; Hoelzl, R. ; Ikari, A. ; von Ammon, W.
Pub. info.: Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology.  pp.194-206,  2002.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-2
4.

Conference Proceedings
Conference Proceedings
4. BULK MICRO DEFECTS OF P/P- EPITAXIAL SILICON WITH WAFERS WITH NITROGEN DOPED SUBSTRATES AND THEIR GETTERING BEHAVIOR
Schmolke, R. ; Blietz, M. ; Hoelzl, R. ; Menzel, D. ; Bender, H.
Pub. info.: Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology.  pp.658-669,  2002.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-2