1.

Conference Proceedings
Conference Proceedings
1. CRITICAL ANGELS FOR ION CHANNELING IN SILICON
Hobler, G.
Pub. info.: Proceedings of the Third International Symposium on Process Physics and Modeling in Semiconductor Technology.  pp.529-544,  1993.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1993-6
2.

Conference Proceedings
Conference Proceedings
2. Atomistic simulation of the isotope effect on defect formation in H/D-implanted Si
Zahel, T. ; Otto, G. ; Hobler, G.
Pub. info.: Silicon-on-insulator technology and devices XII : proceedings of the international symposium.  pp.179-184,  2005.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-03
3.

Conference Proceedings
Conference Proceedings
3. Isotope effects in low-energy ion-induced splitting Invited
Terreault, B. ; Chicoine, M. ; Desrosiers, N. ; Giguere, A. ; Hobler, G. ; Moutanabbir, O. ; Ross, G.G. ; Schiettekatte, F. ; Simpson, P.J. ; Zahel, T.
Pub. info.: Silicon-on-insulator technology and devices XII : proceedings of the international symposium.  pp.155-166,  2005.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-03
4.

Conference Proceedings
Conference Proceedings
4. DOSE, ENERGY AND ION SPECIES DEPENDENCE OF THE EFFECTIVE PLUSFACTOR FOR TRANSIENT ENIJANCED DIFFUSION
Hobler, G. ; Pelaz, L. ; Raffhrty, C.S.
Pub. info.: Proceedings of the Fifth International Symposium of Process Physics and Modeling in Semiconductor Technology.  pp.75-86,  1999.  Pennington, New Jersey.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-2
5.

Conference Proceedings
Conference Proceedings
5. Comparison of Damage Accumulation Models for Boron Implantation in Silicon
Simionescu, A. ; Hobler, G.
Pub. info.: Modeling and simulation of thin-film processing : symposium held April 17-20, 1995, San Francisco, California, U.S.A..  pp.221-,  1995.  Pittsburgh.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 389
6.

Conference Proceedings
Conference Proceedings
6. SIMULATION OF BURIED LAYER EXPERIMENTS CONTAIN- ING ALL FOUR DOPANT SPECIES
Ghaderi, K. ; Hobler, G. ; Budil, M. ; Poetzl, H. ; Pichler, P. ; Ryssel, H. ; Hansch, W. ; Eisele, I. ; Tian, C. ; Stingeder, G.
Pub. info.: Proceedings of the Seventh International Symposium on Silicon Materials Science and Technology.  pp.613-624,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-10
7.

Conference Proceedings
Conference Proceedings
7. COMPUTER SIMULATION OF THE INFLUENCE OF POINT AND EXTENDED DEFECTS ON THE PRECIPITATION OF OXYGEN DURING RAPID THERMAL PROCESSING
Esfandyari, J. ; Senkader, S. ; Hobler, G. ; Poetzl, H. ; Murphy, B.
Pub. info.: Proceedings of the Seventh International Symposium on Silicon Materials Science and Technology.  pp.896-907,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-10
8.

Conference Proceedings
Conference Proceedings
8. Modelling of {311} Defects
Hobler, G. ; Rafferty, C. S.
Pub. info.: Si front-end processing - physics and technology of dopant-defect interactions : symposium held April 6-9, 1999, San Francisco, California, U.S.A..  pp.123-,  1999.  Warrendale, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 568
9.

Conference Proceedings
Conference Proceedings
9. Net Point Defect Concentrations After Ion Implantation in Silicon
Hobler, G.
Pub. info.: Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology.  pp.509-522,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-4