1.

Conference Proceedings
Conference Proceedings
1. The Brittle-to-Ductile Transition in 4H-SiC
Zhang, M. ; Hobgood, H.M. ; Demenet, J.L. ; Pirouz, P.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.767-772,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
2.

Conference Proceedings
Conference Proceedings
2. High Quality SiC Substrates for Semiconductor Devices: From Research to Industrial Production
Muller, St.G. ; Brady, M.F. ; Brixius, W.H. ; Fechko, G. ; Glass, R.C. ; Henshall, D. ; Hobgood, H.M. ; Jenny, J.R. ; Leonard, R. ; Malta, D. ; Powell, A. ; Tsvetkov, V.F. ; Allen, S.T. ; Palmour, J. ; Carter, C.H., Jr.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.23-28,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
3.

Conference Proceedings
Conference Proceedings
3. High Quality SiC Substrates for Semiconductor Devices: From Research to Industrial Production
Muller, St.G. ; Brady, M.F. ; Brixius, W.H. ; Fechko, G. ; Glass, R.C. ; Henshall, D. ; Hobgood, H.M. ; Jenny, J.R. ; Leonard, R. ; Malta, D. ; Powell, A. ; Tsvetkov, V.F. ; Allen, S.T. ; Palmour, J. ; Carter, C.H.,Jr.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.23-28,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
4.

Conference Proceedings
Conference Proceedings
4. Generation of Stacking Faults in Highly Doped n-Type 4H-SiC Substrates
Zhang, M. ; Hobgood, H.M. ; Treu, M. ; Pirouz, P.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.759-762,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
5.

Conference Proceedings
Conference Proceedings
5. Deformation of 4H-SiC Single Crystals Oriented for Prism Slip
Zhang, M. ; Hobgood, H.M. ; Pirouz, P.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.371-374,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
6.

Conference Proceedings
Conference Proceedings
6. The Brittle-to-Ductile Transition in 4H-SiC
Zhang, M. ; Hobgood, H.M. ; Demenet, J.L. ; Pirouz, P.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.767-772,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
7.

Conference Proceedings
Conference Proceedings
7. Sublimation-Grown Semi-Insulating SiC for High Frequency Devices
Muller, St.G. ; Brady, M.F. ; Brixius, W.H. ; Glass, R.C. ; Hobgood, H.M. ; Jenny, J.R. ; Leonard, R.T. ; Malta, D.P. ; Powell, A.R. ; Tsvetkov, V.F. ; Allen, S.T. ; Palmour, J.W. ; Carter, C.H.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.39-44,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436