1.

Conference Proceedings
Conference Proceedings
1. Optoelectronic properties of photodiodes for the mid-and far-infrared based on the InAs/GaSb/AlSb materials family
Fuchs,F. ; Burkle,L. ; Hamid,R. ; Herres,N. ; Pletschen,W. ; Sah,R.E. ; Kiefer,R. ; Schmitz,J.
Pub. info.: Photodetectors : materials and devices VI : 22-24 January 2001, San Jose, USA.  pp.171-182,  2001.  Bellingham, Wash., USA.  SPIE-The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 4288
2.

Conference Proceedings
Conference Proceedings
2. ODMR Studies of MOVPE-Grown GaN Epitaxial Layers
Kunzer,M. ; Kaufmann,U. ; Maier,K. ; Schneider,J. ; Herres,N. ; Akasaki,I. ; Amano,H.
Pub. info.: Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993.  Pt.1  pp.87-92,  1994.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 143-147
3.

Conference Proceedings
Conference Proceedings
3. InAs/Ga1-xInxSb infrared superlattice diodes:correlation between surface morphology and electrical performance
Fuchs,F. ; Burkle,L. ; Pletschen,W. ; Schmitz,J. ; Walther,M. ; Gullich,H. ; Herres,N. ; Muller,S.
Pub. info.: Materials and electronics for high-speed and infrared detectors : 19-20 and 23 July 1999, Denver, Colorado.  pp.41-46,  1999.  Bellingham, Wash..  SPIE - The International Society for Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 3794
4.

Conference Proceedings
Conference Proceedings
4. Textures in Diamond,GaN and SiC Thin Films
Helming,K. ; Herres,N. ; Rauschenbach,R.
Pub. info.: Texture and anisotropy of polycrystals : Proceedings of the International Conference on Texture and Anisotropy of Polycrystals, ITAP, Clausthal, Germany, September 22-25, 1997.  pp.561-566,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 273-275