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Conference Proceedings

1. Growth and Characterisation of Thick SiC Epilayers by High Temperature CVD

Ellison,A. ; Kimoto,T. ; Ivanov,I.G. ; Wahab,Q. ; Henry,A. ; Kordina,O. ; Zhang,J. ; Hemmingsson,C.G. ; Gu,C.-Yu. ; Leys,M.R. ; Janzen,E.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part1 pp.103-106, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

Conference Proceedings

2. Thickness Contour Mapping of SiC Epi-Films on SiC Substrates

MacMillan,M.F. ; Narfgren,P.O. ; Henry,A. ; Janzen,E.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part1 pp.645-648, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

Conference Proceedings

3. SF6/O2 and CF4/O2 Reactive-Ion-Etching-Induced Defects in Silicon Studied by Photoluminescence Spectroscopy:Role of Oxygen

Buyanova,I.A. ; Henry,A. ; Monemar,B. ; Lindstrom,J.L. ; Sheinkman,M.K. ; Oehrlein,G.S.

Pub. info.:	Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995. pp.1807-1812, 1995. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	196-201

Conference Proceedings

4. Growth and Characterisation of SiC Power Device Material

Kordina,O. ; Henry,A. ; Janzen,E. ; ,C.H.Carter,Jr.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part1 pp.97-102, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

Conference Proceedings

5. CVD Growth and Characterisation of SiC Epitaxial Layers on Faces Perpendicular to the(0001)Basal Plane

Hallin,C. ; Ellison,A. ; Ivanov,I.G. ; Henry,A. ; Son,N.T. ; Janzen,E.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part1 pp.123-126, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

Conference Proceedings

6. Cathodoluminescence of Defect Regions in SiC Epi-Films

MacMillan,M.F. ; Hultman,L. ; Hallin,C. ; Ivanov,I.G. ; Henry,A. ; Janzen,E. ; Galloway,S.A.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part1 pp.653-656, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

Conference Proceedings

7. Near Band-Gap Emission in V-Inrplanted and Annealed 4H-SiC

Henry,A. ; Egilsson,T. ; Ivanov,I.G. ; Harris,C.I. ; Savage,S. ; Janzen,E.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part1 pp.497-500, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

Conference Proceedings

8. Changes in the Exciton-Related Photoluminescence of 4H- and 6H-SiC Induced by Uniaxial Stress

Ivanov,I.G. ; Lindefelt,U. ; Henry,A. ; Egilsson,T. ; Kordina,O. ; Janzen,E.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part1 pp.489-492, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

Conference Proceedings

9. Electrical Characterization of the Gallium Acceptor in 4H- and 6H-SiC

Troffer,T. ; Pensl,G. ; Schoner,A. ; Henry,A. ; Hallin,C. ; Kordina,O. ; Janzen,E.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part1 pp.557-560, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

10.

Conference Proceedings

10. The Configurational Change of a Metastable S-Cu Defect in Silicon

Chen,W.M. ; Janzen,E. ; Monemar,B. ; Henry,A. ; Frens,A.M. ; Bennebroek,M.T. ; Schmidt,J.

Pub. info.:	Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993. Pt.2 pp.1179-1184, 1994. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	143-147

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Author: Henry,A.