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14 results

Conference Proceedings

1. EL2 RELATED ANOMALOUS SPLITTING IN THE PHOTOREFLECTANCE RESPONSE OF SEMI-INSULATING GaAs

Durbin, C. ; Estreta, J. ; Glosser, R. ; Duncan, W.. ; Henry, R. L. ; Nordquist, P. ; Bottka, N. ; Gaskill, D. K

Pub. info.:	Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A.. pp.289-294, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	262

Conference Proceedings

2. High-Resolution X-ray Diffraction and X-ray Topography Study of GaN on Al2O3

Chaudhuri, J. ; Ng, M. Hooe ; Koleske, D. D. ; Wickenden, A. E. ; Henry, R. L.

Pub. info.:	Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A.. pp.315-, 1998. Warrendale, Penn.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	512

Conference Proceedings

3. Current-voltage characteristics of ungated AlGaN/GaN heterostructures

Albrecht, J. D. ; Ruden, P. P. ; Binari, S. C. ; Ikossi-Anastasiou, K. ; Ancona, M. G. ; Henry, R. L. ; Koleske, D. D. ; Wickenden, A. E.

Pub. info.:	Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A.. pp.489-, 1999. Warrendale, PA. MRS-Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	572

Conference Proceedings

4. Correlation of drain current pulsed response with microwave power output in AlGaN/GaN HEMTs

Binari, S. C. ; Ikossi-Anastasiou, K. ; Kruppa, W. ; Dietrich, H. B. ; Kelner, G. ; Henry, R. L. ; Koleske, D. D. ; Wickenden, A. E.

Pub. info.:	Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A.. pp.541-, 1999. Warrendale, PA. MRS-Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	572

Conference Proceedings

5. A Kinetic Model for GaN Growth

Koleske, D. D. ; Wickenden, A. E. ; Henry, R. L. ; DeSisto, W. J. ; Gorman, R. J.

Pub. info.:	Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.. pp.167-, 1998. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	482

Conference Proceedings

6. GaN decomposition in ammonia

Koleske, D. D. ; Wickenden, A. E. ; Henry, R. L.

Pub. info.:	GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A.. pp.W3.64.1-, 2000. Warrendale, Pa.. MRS-Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	595

Conference Proceedings

7. Enhanced GaN Decomposition at MOVPE Pressures

Koleske, D. D. ; Wickenden, A. E. ; Henry, R. L. ; Twigg, M. E. ; Culbertson, J. C. ; Gorman, R. J.

Pub. info.:	GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A.. pp.G3.70.1-, 1999. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	537

Conference Proceedings

8. Extrinsic Performance Limitations of AlGaN/GaN Heterostructre Field Effect Transistors

Ruden, P. P. ; Albrecht, J. D. ; Sutandi, A. ; Binari, S. C. ; Ikossi-Anastasiou, K. ; Ancona, M. G. ; Henry, R. L. ; Koleske, D. D. ; Wickenden, A. E.

Pub. info.:	GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A.. pp.G6.35.1-, 1999. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	537

Conference Proceedings

9. Microstructure of GaN Grown on (1120) Sapphire

Ruterana, P. ; Wickenden, A. E. ; Twigg, M. E. ; Koleske, D. D. ; Henry, R. L. ; Tottereau, O.

Pub. info.:	GaN and related alloys - 2000 : symposium held November 27-December 1, 2000, Boston, Massachusetts, U.S.A.. 2001. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	639

10.

Conference Proceedings

10. A Model for the Critical Height for Dislocation Annihilation and Recombination in GaN Columns Deposited by Patterned Growth

Twigg, M. E. ; Bassim, N. D. ; Eddy, C. R. ; Henry, R. L. ; Holm, R. T. ; Mastro, M. A.

Pub. info.:	GaN, AIN, InN and their alloys : symposium held November 29-December 3, 2004, Boston, Massachusetts, U.S.A.. pp.677-684, 2005. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	831

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