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14 results

Conference Proceedings

1. EVIDENCE FOR OXYGEN CONCENTRATION CHANGES INDUCED BY LOW-TEMPERATURE 0-18 IMPLANTATION INTO A SIMOX BURIED-OXIDE LAYER

Scalon, P. J. ; Hemment, P. L. F. ; Robinson, A. K. ; Reeson, K. J. ; Chater, R. J. ; Kilner, J. A. ; Harbeke, G.

Pub. info.:	Silicon-on-insulator and buried metals in semiconductors : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A.. pp.141-146, 1988. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	107

Conference Proceedings

2. DETERMINATION OF THE NITROGEN CONTENT OF AS-IMPLANTED AND ANNEALED SIMOX SUBSTRATES

Kilner, J. A. ; Chater, R. J. ; Biswas, S. ; Hemment, P. L. F. ; Reeson, K. J.

Pub. info.:	Silicon-on-insulator and buried metals in semiconductors : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A.. pp.151-156, 1988. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	107

Conference Proceedings

3. MONITORING SIMOX LAYER PROPERTIES AND IMPLANTATION TEMPERATURE BY OPTICAL MEASUREMENTS

Harbeke, G. ; Steigneier, E. F. ; Hemment, P. L. F. ; Reeson, K. J. ; Jastrzebski, L.

Pub. info.:	Silicon-on-insulator and buried metals in semiconductors : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A.. pp.133-136, 1988. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	107

Conference Proceedings

4. AN INVESTIGATION OF BURIED LAYER FORMATION BY 40keV OXYGEN IMPLANTATION INTO SILICON

Li, Y. ; Kilner, A. ; Chater, R. J. ; Tate, T. J. ; Hemment, P. L. F. ; Nejim, A.

Pub. info.:	Phase formation and modification by beam-solid interactions : symposium held December 2-6, 1991, Boston, Massachusetts, U.S.A.. pp.115-120, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	235

Conference Proceedings

5. SILICON ON INSULATOR BY HIGH DOSE IMPLANTATION

Hemment, P. L. F.

Pub. info.:	Comparison of thin film transistor and SOI technologies : symposium held February 1984 in Albuquerque, New Mexico, U.S.A.. pp.41-52, 1984. New York. North Holland
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	33

Conference Proceedings

6. CHARACTERIZATION OF DEVICE GRADE SOI STRUCTURES FORMED BY IMPLANTATION OF HIGH DOSES OXYGEN

Hemment, P. L. F. ; Maydell-Ondrusz, E. A. ; Stephens, K. G. ; Arrowsmith, R. P. ; Glaccum, A> C. ; Kilner, J. A. ; Butcher, J. B.

Pub. info.:	Ion implantation and ion beam processing of materials : symposium held November 1983 in Boston, Massachusetts, U.S.A.. pp.281-286, 1984. New York. North-Holland
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	27

Conference Proceedings

7. Formation of titanium disilicide by electron beam irradiation under non steady state conditions

Maydell-Ondrusz, E. A. ; Harper, R. E. ; Abid, A. ; Hemment, P. L. F. ; Stephens, K. G.

Pub. info.:	Thin films and interfaces II : symposium held November 1983, in Boston, Massachusetts, U.S.A.. pp.99-104, 1984. New York. North-Holland
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	25

Conference Proceedings

8. TOTAL DIELECTRIC ISOLATION (TDI) OF DEVICE ISLANDS USING SIMOX/SOI TECHNOLOGY

Hemment, P. L. F. ; Robinson, A. K. ; Reeson, K. J. ; Davis, J. R. ; Kilner, J. R. ; Chater, R. J. ; Stoemenos, J.

Pub. info.:	Silicon-on-insulator and buried metals in semiconductors : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A.. pp.87-92, 1988. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	107

Conference Proceedings

9. FORMATION ON GERMANIUM DIOXIDE DURING WET OXIDATION OF Si0.5Ge0.5 ALLOY

Zhang, J. P. ; Hemment, P. L. F. ; Kubiak, R. A. ; Parker, E. H. C.

Pub. info.:	Growth, processing, and characterization of semiconductor heterostructures : Symposium held November 29-December 2, 1993, Massachusetts, U.S.A.. pp.73-, 1994. Pittsburgh. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	326

10.

Conference Proceedings

10. Visible Photoluminescence from Si Ion-Implanted and Thermally-Annealed SiO2 Films

Kanemitsu, Y. ; Shimizu, N. ; Okamoto, S. ; Komoda, T. ; Hemment, P. L. F. ; Seaiy, B. J.

Pub. info.:	Advances in microcrystalline and nanocrystalline semiconductors, 1996 : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.. pp.99-, 1997. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	452

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