1.

Conference Proceedings
Conference Proceedings
1. Low ohmicity contacts to mono-and polycrystalline silicon (Abstract)
Harrison, H. B. ; Williams, J. S. ; Reeves, G. K.
Pub. info.: Interfaces and contacts : symposium held November 1982 in Boston, Massachusetts, U.S.A..  pp.381-384,  1983.  New York.  North-Holland
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 18
2.

Conference Proceedings
Conference Proceedings
2. APPLICATIONS OF A CONTINUOUS WAVE INCOHERENT LIGHT SOUCE (CWILS) TO SEMICONDUCTOR PROCESSING
Harrison, H. B. ; Johnson, S. T. ; Cornish, B. ; Adams. F. M. ; Short, K. T. ; Williams, J. S.
Pub. info.: Laser-solid interactions and transient thermal processing of materials : symposium held November 1982 in Boston, Massachusetts, U.S.A..  pp.393-400,  1983.  New York.  North-Holland
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 13
3.

Conference Proceedings
Conference Proceedings
3. PROPERTIES OF GALLIUM IMPLANTED FURNACE AND RAPIDLY ANNEALED POLYCRYSTALLINE SILICON
Harrison, H. B. ; Pogany, A. P. ; Komen, Y.
Pub. info.: Rapid thermal processing of electronic materials : symposium held April 21-23, 1987, Anaheim California, U.S.A..  pp.329-334,  1987.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 92
4.

Conference Proceedings
Conference Proceedings
4. SHALLOW JUNCTIONS FORMED BY THE THERMAL REDISTRIBUTION OF IMPLANTED ARSENIC INTO TiSi2
Cao, D. X. ; Harrison, H. B. ; Reeves, G. J.
Pub. info.: Fundamentals of beam-solid interactions and transient thermal processing : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A..  pp.737-742,  1988.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 100
5.

Conference Proceedings
Conference Proceedings
5. Characteristics of Dielectrics Formed or Annealed in a Nitric Oxide Ambient
Harrison, H. B. ; Yao, Z.-Q. ; Dimitrijev, S. ; Sweatman, D. ; Yeow, Y.-T.
Pub. info.: Rapid thermal and integrated processing IV : symposium held April 17-20, 1995, San Francisco, California, U.S.A..  pp.233-,  1995.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 387
6.

Conference Proceedings
Conference Proceedings
6. Effect of NO on the Electrical Characteristics of SiO2 Grown on p-Type 4H SiC
Li, H. F. ; Dimitrijev, S. ; Harrison, H. B. ; Sweatman, D. ; Tanner, P.
Pub. info.: Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.223-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 512
7.

Conference Proceedings
Conference Proceedings
7. Combined Thermal and UV Growth of Thin Dielectrics on Silicon in an NO Environment
Jamet, P. ; Tanner, P. ; Harrison, H. B. ; Dimitrijev, S.
Pub. info.: Ultrathin SiO[2] and high-K materials for USLI gate dielectrics : symposium held April 5-8, 1999, in San Francisco, California, U.S.A..  pp.57-,  1999.  Warrendale, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 567
8.

Conference Proceedings
Conference Proceedings
8. Specific contact resistance measurements on multilayer interconnect structures
Harrison, H. B. ; Reeves, G. K.
Pub. info.: Thin films and interfaces II : symposium held November 1983, in Boston, Massachusetts, U.S.A..  pp.545-550,  1984.  New York.  North-Holland
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 25
9.

Conference Proceedings
Conference Proceedings
9. PROPERTIES OF HIGH DOSE LOW TEMPERATURE RAPID THERMALLY ANNEALED GALLIUM IMPLANTED SILICON
Lee, Y. H. ; Harrison, H. B. ; Pogany, A. P. ; Olson, G. L
Pub. info.: Rapid thermal processing of electronic materials : symposium held April 21-23, 1987, Anaheim California, U.S.A..  pp.21-26,  1987.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 92
10.

Conference Proceedings
Conference Proceedings
10. XPS Analysis of SiO2/SiC Interface Annealed in Nitric Oxide Ambient
Li, H. -F. ; Dimitrijev, S. ; Sweatman, D. ; Harrison, H. B.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.399-402,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)