1.

Conference Proceedings
Conference Proceedings
1. HYDROGEN PASSIVATION OF Si AND Be DOPANTS IN InAlAs
Roos, G. ; Johnson, N. M. ; Pao, Y. C. ; Harris Jr., J. S.
Pub. info.: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.667-672,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 240
2.

Conference Proceedings
Conference Proceedings
2. PREPARATION OF OPTICALLY SMOOTH SURFACES OF HIGH-TC SUPERCONDUCTING FILMS
Kim, J. H. ; Kapitulnik, A. ; Harris Jr., J. S. ; Char, K. ; Bozovic, I. ; Lee, W. Y.
Pub. info.: Low energy ion beam and plasma modification of materials : symposium held April 30-May 2, 1991, Anaheim, California, U.S.A..  pp.159-164,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 223
3.

Conference Proceedings
Conference Proceedings
3. HYDROGEN PASSIVATION AND REACTIVATION OFDX CENTERS IN Se-DOPED AND Si-DOPED A1GaAs --A COMPARISON
Roos, G. ; Johnson, N. M. ; Herring C. ; Harris Jr., J. S.
Pub. info.: Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A..  pp.419-424,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 262
4.

Conference Proceedings
Conference Proceedings
4. NUCLEATION OF GaAs ON VICINAL Si (100) SURFACES
Hull, R. ; Fischer-Colbrie, A. ; Rosner, S. J. ; Koch, S. M. ; Harris Jr., J. S.
Pub. info.: Initial stages of epitaxial growth : symposium held April 22-24, 1987, Anaheim, California, U.S.A..  pp.25-32,  1987.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 94
5.

Conference Proceedings
Conference Proceedings
5. DEEP ELECTRON TRAPS IN MBE GaAs ON Si
Nauka, K. ; Reid, G. A. ; Rosner, S. J. ; Koch, S. M. ; Harris Jr., J. S.
Pub. info.: Heteroepitaxy on silicon II : symposium held April 21-23, 1987, Anaheim, California, U.S.A..  pp.225-232,  1987.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 91
6.

Conference Proceedings
Conference Proceedings
6. THE EFFECT OF Si PLANAR DOPING ON DX CENTERS IN Al.26Ga.74As
Solomon, G. S. ; Ross, G. ; Munoz-Merino, E. ; Harris Jr., J. S.
Pub. info.: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.865-870,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 240
7.

Conference Proceedings
Conference Proceedings
7. *THE NUCLEATION AND GROWTH OF GaAs ON SI
Harris Jr., J. S. ; Koch, S. M. ; Rosner, S. J.
Pub. info.: Heteroepitaxy on silicon II : symposium held April 21-23, 1987, Anaheim, California, U.S.A..  pp.3-14,  1987.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 91
8.

Conference Proceedings
Conference Proceedings
8. HETERONUCLEATION ONTO Si SURFACES
Hull, R. ; Bean, J. C. ; Chand, N. ; Leibenguth, R. E. ; Bahnck, D. ; Koch, S. M. ; Harris Jr., J. S.
Pub. info.: Epitaxy of semiconductor layered structures : symposium held November 30-December 4, 1987, Boston, Massachusetts, U.S.A..  pp.455-462,  1988.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 102
9.

Conference Proceedings
Conference Proceedings
9. STRUCTURAL CHARACTERIZATION OF THIN, LOW TEMPERATURE FILMS OF GaAs ON Si SUBSTRATES
Rosner, S. J. ; Koch, S. M. ; Harris Jr., J. S.
Pub. info.: Heteroepitaxy on silicon II : symposium held April 21-23, 1987, Anaheim, California, U.S.A..  pp.155-160,  1987.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 91